S16765-01MS Infrared Photoelectric Sensor
General Information:
- Product Name: Silicon photodiode S16765 - 01MS
- Brand: Hamamatsu Photonics
- Package Specification: Plastic package
- Category: Silicon (Si) photodiode
- Application Range: Visible to near - infrared range
Performance Parameters:
- Photosensitive Area: 2.8 × 2.4 mm
- Number of Pixels: 1
- Cooling Method: Non - cooled type
- Spectral Response Range: 320 - 1000 nm
- Peak Sensitivity Wavelength (Typical Value): 720 nm
- Photosensitivity (Typical Value): 0.4 A/W
- Dark Current (Maximum Value): 20 pA
- Rise Time (Typical Value): 0.5 μs
- Junction Capacitance (Typical Value): 200 pF
- Measurement Conditions: Ta = 25°C, typical value. Photosensitivity: λ = λp. Dark current: VR = 1 V. Junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise specified.
Features:
- Low Dark Current: It can measure from low to high illuminance with high accuracy.
- Precision Packaging: The pre - molded package can prevent stray light from the side and back of the package from entering the photosensitive area, which is beneficial to improving the measurement accuracy.
Photosensitive Area | 2.8 × 2.4 mm |
Number of Pixels | 1 |
Package | Plastic |
Cooling Method | Non - cooled type |
Spectral Response Range | 320 - 1000 nm |
Peak Sensitivity Wavelength (Typical Value) | 720 nm |
Photosensitivity (Typical Value) | 0.4 A/W |
Dark Current (Maximum Value) | 20 pA |
Rise Time (Typical Value) | 0.5 μs |
Junction Capacitance (Typical Value) | 200 pF |
Measurement Conditions | Ta = 25°C, typical value.Photosensitivity: λ = λp. Dark current: VR = 1 V. Junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise specified. |