Specifications
Brand Name :
Hamamatsu
Model Number :
S1337-33BQ
Place of Origin :
Japan
Payment Terms :
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Delivery Time :
3-5workingdays
Packaging Details :
Standard Package
MOQ :
1
Supply Ability :
3000/pcs/month
Photosensitive area :
2.4 × 2.4 mm
Package :
Ceramic
Cooling :
Non-cooled
Reverse voltage (max.) :
5 V
Description

S1337-33BQ Si Photodiode For UV to IR Precision Photometry Low Capacitance

These Si photodiodes have sensitivity in the Uv to near IR range. They are suitable for low-light-level detection in analysis
and the like.

Features
High uv sensitivity:QE75%(=200 nm)
Low capacitance

Applications
Analytical equipment
Optical measurement eguipment

Specification:

Spectral response range
190 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.5 A/W
Dark current (max.) 30 pA
Rise time (typ.) 0.2 μs
Terminal capacitance (typ.) 65 pF
Noise equivalent power (typ.) 8.1×10-15 W/Hz1/2


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S1337-33BQ Si Photodiode For UV to IR Precision Photometry Low Capacitance

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Brand Name :
Hamamatsu
Model Number :
S1337-33BQ
Place of Origin :
Japan
Payment Terms :
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Delivery Time :
3-5workingdays
Packaging Details :
Standard Package
Contact Supplier
S1337-33BQ Si Photodiode For UV to IR Precision Photometry Low Capacitance
S1337-33BQ Si Photodiode For UV to IR Precision Photometry Low Capacitance
S1337-33BQ Si Photodiode For UV to IR Precision Photometry Low Capacitance
S1337-33BQ Si Photodiode For UV to IR Precision Photometry Low Capacitance
S1337-33BQ Si Photodiode For UV to IR Precision Photometry Low Capacitance
S1337-33BQ Si Photodiode For UV to IR Precision Photometry Low Capacitance

ShenzhenYijiajie Electronic Co., Ltd.

Verified Supplier
4 Years
guangdong, shenzhen
Since 2006
Business Type :
Manufacturer, Trading Company
Total Annual :
900000-1000000
Employee Number :
50~80
Certification Level :
Verified Supplier
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