S12060-10 Silicon Avalanche Photodiode Low Temperature Coefficient
This is an 800nm band near-infrared Si APD that can operate stably over a wide temperature range. Suitable for applications such as optical rangefinders and FSO (free space optics).
Features
 - Breakdown voltage temperature coefficient: 0.4 V/℃
 - High-speed response
 - High sensitivity, low noise
| Sensitivity (typical) | 0.5 A/W | 
| Dark current (maximum) | 2 nA | 
| Cut-off frequency (typical) | 600 MHz | 
| Terminal capacitance (typical) | 6 pF | 
| Breakdown voltage (typical) | 200 V | 
| Breakdown voltage temperature coefficient (typical) | 0.4 V/°C | 
| Gain (typical) | 100 | 
