S12060-10 Silicon Avalanche Photodiode Low Temperature Coefficient
This is an 800nm band near-infrared Si APD that can operate stably over a wide temperature range. Suitable for applications such as optical rangefinders and FSO (free space optics).
Features
- Breakdown voltage temperature coefficient: 0.4 V/℃
- High-speed response
- High sensitivity, low noise
Sensitivity (typical) | 0.5 A/W |
Dark current (maximum) | 2 nA |
Cut-off frequency (typical) | 600 MHz |
Terminal capacitance (typical) | 6 pF |
Breakdown voltage (typical) | 200 V |
Breakdown voltage temperature coefficient (typical) | 0.4 V/°C |
Gain (typical) | 100 |