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YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared
YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared
YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared
YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared
YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared
YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared
YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared
YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared
YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared
YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared
Specifications
Dark current ID :
0.4 μA (typical)
Delivery Time :
5-8 days
Supply Ability :
1500
Price :
Negotiable
Response rate (λp) :
1.0 ~ 1.3 A/W
Place of Origin :
USA
Model Number :
G12183-003K
Noise equivalent power NEP :
~4–9×10
Operating temperature :
-40℃ ~ +85℃
Packaging Details :
Palletized
Brand Name :
YJJ
Cut-off frequency :
20–50 MHz
MOQ :
1
Payment Terms :
L/C, D/A, D/P, T/T, ,
Peak wavelength :
2.3 μm
Diode capacitance Cj :
50–100 pF
Spectral range :
0.9 ~ 2.6 μm
Description

Product Description:

YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared

Features:

Sensitive area: φ1mm

Product characteristics

Low noise

Low junction capacitance

Low dark current

Sensitive area: φ1mm

Detailed parameter

The sensitive area is φ1mm

The number of pixels is 1

Encapsulation Metal

Encapsulation type: TO-18

Cooling mode Non-cooled

Spectral response range is 0.9 to 1.7 μm

The peak sensitivity wavelength (typical value) is 1.55 μm

Light sensitivity (typical value) 1.1 A/W

Dark current (Max.) 4 nA

Cut-off frequency (typical value) 60 MHz

Junction capacitance (typical value) 55 pF

Noise equivalent power (typical value) 1.4×10-14 W/Hz1/2

Typ. Ta=25 ℃, unless otherwise noted, Photosensitivity: λ=λp, Dark current: VR= 5V, Cutoff frequency: VR= 5V, RL= 50Ω, -3 dB, Terminal capacitance: VR= 5V, f= 1MHz.

Specifications:

Photosensitive area 0.2mm
The encapsulation type is TO-18
Peak sensitivity wavelength (typical value) 800 nm
spectral response range is 400 to 1000 nm
Photosensitive area 0.2mm

YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared

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YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared

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Product Detail
Dark current ID :
0.4 μA (typical)
Delivery Time :
5-8 days
Supply Ability :
1500
Price :
Negotiable
Response rate (λp) :
1.0 ~ 1.3 A/W
Place of Origin :
USA
Contact Supplier
YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared
YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared
YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared
YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared
YJJ G12183-003K InGaAsPIN Photodiode for High-Speed Optical Detection Near-Infrared Long-Wave Infrared

ShenzhenYijiajie Electronic Co., Ltd.

Verified Supplier
5 Years
guangdong, shenzhen
Since 2006
Business Type :
Manufacturer, Trading Company
Main Products :
Oxygen Gas Sensor, Electrochemical Gas Sensor, Gas Sensor
Total Annual :
900000-1000000
Employee Number :
50~80
Certification Level :
Verified Supplier
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