G12180-003A Infrared Photoelectric Sensor (InGaAs PIN photodiode) For Laser Monitoring Systems
1. Application Areas:
- Laser Monitoring Systems: Enables real-time detection and monitoring of laser output intensity in industrial laser processing, medical laser equipment, and research-grade laser setups, ensuring stable laser performance.
- Optical Power Meters: Serves as a core sensing component in optical power measurement devices, accurately capturing near-infrared (NIR) optical power signals for applications like fiber optic testing and laboratory photometry.
- Laser Diode Life-Cycle Testing: Withstands long-term operation and maintains consistent responsiveness, making it suitable for evaluating the durability and performance degradation of laser diodes over their service life.
- Near-Infrared (NIR) Photometry: Facilitates precise measurement of NIR light absorption, transmission, or reflection in fields such as biochemical analysis, material science, and environmental monitoring.
- Optical Communication Systems: Detects high-speed NIR optical signals (e.g., in 1.3 μm or 1.55 μm wavelength bands) for use in fiber optic communication transceivers, ensuring reliable data transmission in telecom networks.
2. Key Features:
- Broad NIR Spectral Response: Operates across a wavelength range of 0.9–1.7 μm, covering critical bands for optical communications, laser applications, and NIR photometry.
- High Sensitivity: Delivers a typical photosensitivity of 1.1 A/W (at peak wavelength ~1.55 μm), enabling accurate detection of low-intensity NIR optical signals.
- Low Dark Current: Features a maximum dark current of 0.5 nA (under reverse voltage VR = 5V), minimizing background noise and improving signal-to-noise ratio (SNR) for precise measurements.
- High-Speed Performance: Boasts a typical cut-off frequency of 600 MHz, supporting high-speed signal detection for applications like fast optical communication or laser pulse monitoring.
- Compact & Robust Package: Housed in a TO-18 package (a standard, compact metal package), ensuring mechanical stability, easy integration into circuit designs, and compatibility with standard optical mounting setups.
- Wide Operating Temperature Range: Functions reliably in temperatures from -40°C to 100°C, making it suitable for harsh industrial environments or outdoor applications.
- Low Junction Capacitance: Has a typical junction capacitance of 5 pF (VR = 5V), reducing signal distortion and enhancing high-frequency performance.
| Sensor Type |
InGaAs PIN Photodiode |
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| Package Type |
TO-18 |
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| Operation Mode |
Photoconductive |
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| Photosensitive Area Diameter |
φ0.3 mm |
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| Number of Elements |
1 |
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| Cooling Method |
Non-cooled |
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| Spectral Response Range |
0.9 – 1.7 μm |
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| Peak Sensitivity Wavelength |
~1.55 μm |
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| Photosensitivity |
Typ. 1.1 A/W |
λ = 1.55 μm, Vₐ = 5V |
| Dark Current |
Max. 0.5 nA |
Vᵣ = 5V, Tₐ = 25℃, No light |
| Cut-off Frequency (-3dB) |
Typ. 600 MHz |
Vᵣ = 5V, Rₗ = 50Ω, λ = 1.3 μm |
| Junction Capacitance |
Typ. 5 pF |
Vᵣ = 5V, f = 1 MHz |
| Noise Equivalent Power (NEP) |
Typ. 4.2×10⁻¹⁵ W/Hz¹/² |
λ = 1.55 μm, Vᵣ = 5V, Tₐ = 25℃ |
| Detectivity (D*) |
Typ. 6.3×10¹² cm·Hz¹/²/W |
λ = 1.55 μm, Vᵣ = 5V, Tₐ = 25℃ |
| Shunt Resistance |
200 – 1000 MΩ |
Vᵣ = 0V, Tₐ = 25℃, No light |
| Maximum Reverse Voltage (Vᵣₘₐₓ) |
20 V |
Tₐ = 25℃ |
| Window Material |
Borosilicate Glass |
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| Operating Temperature Range |
-40℃ – 100℃ |
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| Storage Temperature Range |
-55℃ – 125℃ |
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| Temperature Coefficient of Sensitivity |
1.09 times/℃ |
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