Specifications
Brand Name :
Hamamatsu
Model Number :
S12060-10
Place of Origin :
Japan
MOQ :
Standard
Supply Ability :
3000/pcs/month
Delivery Time :
3-5Workingdays
Packaging Details :
Standard
Price :
Negotiable
Type :
Near infrared type
Photosensitive area :
φ1 mm
Package :
Metal
Package category :
TO-18
Peak sensitivity wavelength (typical) :
800 nm
Spectral response range :
400 to 1000 nm
Description

S12060-10 Silicon Avalanche Photodiode Low Temperature Coefficient

This is an 800nm ​​band near-infrared Si APD that can operate stably over a wide temperature range. Suitable for applications such as optical rangefinders and FSO (free space optics).

Features
- Breakdown voltage temperature coefficient: 0.4 V/℃
- High-speed response
- High sensitivity, low noise

Sensitivity (typical) 0.5 A/W
Dark current (maximum) 2 nA
Cut-off frequency (typical) 600 MHz
Terminal capacitance (typical) 6 pF
Breakdown voltage (typical) 200 V
Breakdown voltage temperature coefficient (typical) 0.4 V/°C
Gain (typical) 100

S12060-10 Silicon Avalanche Photodiode Low Temperature Coefficient

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S12060-10 Silicon Avalanche Photodiode Low Temperature Coefficient

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Brand Name :
Hamamatsu
Model Number :
S12060-10
Place of Origin :
Japan
MOQ :
Standard
Supply Ability :
3000/pcs/month
Delivery Time :
3-5Workingdays
Contact Supplier
S12060-10 Silicon Avalanche Photodiode Low Temperature Coefficient
S12060-10 Silicon Avalanche Photodiode Low Temperature Coefficient
S12060-10 Silicon Avalanche Photodiode Low Temperature Coefficient
S12060-10 Silicon Avalanche Photodiode Low Temperature Coefficient

ShenzhenYijiajie Electronic Co., Ltd.

Verified Supplier
4 Years
guangdong, shenzhen
Since 2006
Business Type :
Manufacturer, Trading Company
Total Annual :
900000-1000000
Employee Number :
50~80
Certification Level :
Verified Supplier
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