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lithium aluminate single crystal is the best matching with the gallium nitride epitaxial film substrate material , gallium nitride thin film is the basis of the current production of blue, and purple, and the ultraviolet light emitting diode and solid white light source , and the use and nitrogen quality substrate film of gallium good match is the key to good GaN films .
Properties:
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Growth Method
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Czochralski method
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Crystal Structure
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cross-cut
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Density
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4.18 g/cm3
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Melting point
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1600 ℃
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Mohs hardness
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7.5 Mohs
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lattice parameter
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a=5.406 A
b=5.012 A
c=6.379 A
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Apperance
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White to brown , there haven’t twins crystal and inclusions
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Standard spec:
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Orientation
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<100>,<110>,<111>±0.5º
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Dimension
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dia30 x 0.5mm 20 x 20 x 0.5mm
10 x 10 x 0.5mm 10 x 5 x 0.5mm 5 x 5 x 0.5mm
Customization available
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Polish
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Single polish, double polish
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surface roughness
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Surface roughness(Ra):<=5A
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Packing:
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Packing: The substrate is packed with 100 grade clean plastic bag under 1000 class clean room.
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