|
Major capability parameter
|
|||||||
|
single crystal
|
Doped
|
conduction type
|
concentration of flows cm-3
|
Density
cm-2
|
Growth method
Max size
|
Substrate
|
|
|
GaAs
|
None
|
Si
|
/
|
<5×105
|
LEC
HB
Dia3″
|
Dia3″×0.5
Dia2″×0.5
|
|
|
Si
|
N
|
>5×1017
|
|||||
|
Cr
|
Si
|
/
|
|||||
|
Fe
|
N
|
~2×1018
|
|||||
|
Zn
|
P
|
>5×1017
|
|||||
|
Size(mm)
|
25×25×0.5mm,10×10×0.5mm,10×5×0.5mm,5×5×0.5mm
Special size and orientation are available upon request
|
||||||
|
Surface rough
|
Surface roughness(Ra):<=5A
|
||||||
|
Polishing
|
Single or double
|
||||||
|
Pack
|
100 clean bag,1000 exactly clean bag
|
||||||