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Ge single crystal substrate
Ge single crystal substrate
Specifications
Place of Origin :
china
Brand Name :
KH-Crystal
Description

Major capability parameter
Growth method
Czochralski method
Crystal structure
M3
Unit cell constant
a=5.65754 Å
Density
5.323g/cm3
Melt point
937.4℃
Doped material
No doped
Sb-doped
In / Ga –doped
Type
/
N
P
Resistivity
＞35Ωcm
0.05Ωcm
0.05~0.1Ωcm
EPD
＜4×103∕cm2
＜4×103∕cm2
＜4×103∕cm2
Size
10x3,10x5,10x10,15x15,,20x15,20x20,
dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm
Thickness
0.5mm,1.0mm
Polishing
Single or double
Crystal orientation
<100>,<110>,<111>,±0.5º
Ra:
≤5Å(5µm×5µm)
Pack
100 clean bag,1000 exactly clean bag

Product tags

substrate crystals

,

srtio3 substrate

,

ceramic substrate com
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Ge single crystal substrate

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Product Detail
Place of Origin :
china
Brand Name :
KH-Crystal
Contact Supplier
Ge single crystal substrate

KINHENG CRYSTAL MATERIAL(SHANGHAI) CO., LTD

Verified Supplier
13 Years
Shanghai, Shanghai
Since 2005
Business Type :
Manufacturer,Exporter
Main Products :
Optical crystal, Scintillation crystal, Single Crystal Substrate
Total Annual :
>lessthan$1,000,000
Employee Number :
>less than 50
Certification Level :
Verified Supplier
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