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SiC
SiC
Specifications
Place of Origin :
china
Brand Name :
KH-Crystal
Description

Major capability parameter
Growth method
MOCVD
Crystal Structure
M6
Unit cell constant
a=3.08 Å c=15.08 Å
Sequence
ABCACB
Direction
<0001> 3.5 º
With clearance
2.93 eV
Hardness
9.2(mohs)
Heat travels @300K
5 W/ cm.k
Dielectric constants
e(11)=e(22)=9.66 e(33)=10.33
Size
10x3,10x5,10x10,15x15,,20x15,20x20,
dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm
Thickness
0.5mm,1.0mm
Polishing
Single or double
Crystal orientation
<001>±0.5º
redirection precision
±0.5°
Redirection the edge:
2°(special in 1°)
Angle of crystalline
Special size and orientation are available upon request
Ra:
≤5Å(5µm×5µm)
Pack
100 clean bag,1000 exactly clean bag

Product tags

beta sic

,

acd see

,

philip stark
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SiC

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Product Detail
Place of Origin :
china
Brand Name :
KH-Crystal
Contact Supplier
SiC

KINHENG CRYSTAL MATERIAL(SHANGHAI) CO., LTD

Verified Supplier
13 Years
Shanghai, Shanghai
Since 2005
Business Type :
Manufacturer,Exporter
Main Products :
Optical crystal, Scintillation crystal, Single Crystal Substrate
Total Annual :
>lessthan$1,000,000
Employee Number :
>less than 50
Certification Level :
Verified Supplier
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