Specifications
Brand Name :
ZMSH
Model Number :
Diamond Wire Triple-Station Single-Wire Cutting Machine
Certification :
rohs
Place of Origin :
CHINA
MOQ :
3
Price :
by case
Payment Terms :
T/T
Supply Ability :
1000pcs per month
Delivery Time :
3-6 months
Packaging Details :
package in 100-grade cleaning room
Model :
Three station diamond single line cutting machine
Wire running speed :
1000 (MIX) m/min
Diamond wire diameter :
0.25-0.48mm
Cutting accuracy :
0.01mm
Water tank :
150L
Swing angle :
±10°
Workstation :
3
Description

Diamond Wire Triple-Station Single-Wire Cutting Machine Introduction

Diamond Wire Triple-Station Single-Wire Cutting Machine for SiC/Sapphire/Silicon Processing

The Diamond Wire Triple-Station Single-Wire Cutting Machine is a fully automated precision machining system specifically designed for processing highly complex hard and brittle materials. Featuring a modular design, it integrates three independent workstations for rough cutting, precision finishing, and polishing. Equipped with a high-rigidity gantry structure and nano-grade linear motor drive system (repeat positioning accuracy ±0.5μm), the machine utilizes a single diamond wire (diameter 0.1-0.3mm) to sequentially complete multi-process machining, enabling one-stop precision manufacturing from blank to finished product. It is particularly suitable for high-end process scenarios requiring special-shaped cutting, ultra-thin wafer processing, and low surface damage, comprehensively supporting precision machining needs for semiconductor and optoelectronic materials including silicon, silicon carbide (SiC), sapphire, and quartz.


Diamond Wire Triple-Station Single-Wire Cutting Machine Technical Specifications


Model Three station diamond single line cutting machine
Maximum workpiece size 600*600mm
Wire running speed 1000 (MIX) m/min
Diamond wire diameter 0.25-0.48mm
Line storage capacity of supply wheel 20km
Cutting thickness range 0-600mm
Cutting accuracy 0.01mm
Vertical lifting stroke of workstation 800mm
Cutting method The material is stationary, and the diamond wire sways and descends
Cutting feed speed 0.01-10mm/min (According to the material and thickness)
Water tank 150L
Cutting fluid Anti rust high-efficiency cutting fluid
Swing angle ±10°
Swing speed 25°/s
Maximum cutting tension 88.0N (Set minimum unit0.1n)
Cutting depth 200~600mm
Make corresponding connecting plates according to the customer's cutting range -
Workstation 3
Power supply Three phase five wire AC380V/50Hz
Total power of machine tool ≤32kw
Main motor 1*2kw
Wiring motor 1*2kw
Workbench swing motor 0.4*6kw
Tension control motor 4.4*2kw
Wire release and collection motor 5.5*2kw
External dimensions (excluding rocker arm box) 4859*2190*2184mm
External dimensions (including rocker arm box) 4859*2190*2184mm
Machine weight 3600ka


Diamond Wire Triple-Station Single-Wire Cutting Machine Working Principle

Diamond Wire Triple-Station Single-Wire Cutting Machine for SiC / Sapphire / Silicon Processing

1. Three-Station Collaborative Operation:

  • Station A (Rough Cutting): High-speed cutting (1-2m/s) for rapid shaping, leaving 0.05mm allowance.
  • Station B (Precision Finishing): Low-speed precision trimming (0.5m/s) with accuracy up to ±0.01mm.
  • Station C (Polishing): Chemical mechanical polishing (CMP) or laser treatment achieves surface roughness Ra<0.2μm.

2. Intelligent Control System:

  • PLC-based synchronization ensures seamless process transitions.
  • Machine vision positioning (5μm accuracy) automatically calibrates cutting paths.

Diamond Wire Triple-Station Single-Wire Cutting Machine for SiC / Sapphire / Silicon Processing


Diamond Wire Triple-Station Single-Wire Cutting Machine Features and Compatible Materials

Feature

Description

Material Characteristics

Three-Process Integration

Reduces workpiece handling, lowering contamination rate by 90%

Silicon (ultra-thin wafers <50μm), SiC (high hardness)

High-Precision Special-Shaped Cutting

Supports complex shapes (arcs/bevels) with profile accuracy ±0.02mm

Sapphire (optical grade), quartz (low thermal expansion)

Adaptive Tension Control

Real-time wire tension adjustment (20-50N) prevents breakage

Ceramics (AlN/Al₂O₃), composite substrates

Multi-Material Compatibility

Quick parameter switching for different materials

Special crystals (LiNbO₃), CVD diamond


Diamond Wire Triple-Station Single-Wire Cutting Machine Technical Advantages

  1. Efficiency: Three-station continuous processing reduces cycle time by 40%.
  2. Quality: Polishing station achieves surface damage layer <10nm, improving device performance by 20%.
  3. Flexibility: Independent station operation adapts to R&D and small-batch needs.
  4. Intelligence: IoT data tracking with real-time monitoring of cutting force and temperature.


Diamond Wire Triple-Station Single-Wire Cutting Machine core application areas

Diamond Wire Triple-Station Single-Wire Cutting Machine for SiC / Sapphire / Silicon Processing

1. Semiconductor Power Device Manufacturing:

  • SiC MOSFET Trench Processing: Three-station collaboration first rough-cuts trench profiles, then precision-finishes sidewalls (±0.1° angle tolerance), and finally polishes to achieve trench surface roughness Ra<10nm, significantly enhancing switching performance.
  • Ultra-Thin IGBT Wafer Dicing: For silicon wafers <50μm thick, "descending + oscillating" composite cutting technology controls chipping to <5μm with >99.8% yield.

2. Consumer Electronics Optical Components:

  • 3D Curved Sapphire Cover Processing: Rough-cuts basic contours, precision-finishes curved surfaces (radius R0.5mm±0.01mm), and polishes to achieve >93% transmittance for smartphone camera modules and smartwatch screens.
  • Micro-Prism Array Fabrication: Processes micron-level prism structures (50-200μm depth) on quartz glass, ensuring array pitch error <1μm.

3. Advanced Research & Special Engineering:

  • Fusion Device Window Material Processing: Special-shaped cutting of CVD diamond (0.3-1mm thickness) avoids graphitization, maintaining thermal conductivity >2000W/m·K.
  • Aerospace Ceramic Thermal Protection Components: Microchannel cutting (0.1mm width/1mm depth) on AlN substrates achieves channel wall roughness Ra<0.1μm, reducing fluid resistance.

Diamond Wire Triple-Station Single-Wire Cutting Machine for SiC / Sapphire / Silicon Processing


Diamond Wire Triple-Station Single-Wire Cutting Machine FAQ

1. Q: What are the benefits of 3-station diamond wire cutting?
A: It combines rough cutting, precision finishing, and polishing in one system, reducing processing time by 40% and improving surface quality (Ra<0.2μm).

2. Q: Which materials can be processed with this machine?
A: Hard/brittle materials like SiC, sapphire, silicon, quartz, and ceramics with ±0.01mm precision.

Tags: #Diamond Wire Triple-Station Single-Wire Cutting Machine, #SiC/Sapphire/Silicon Processing

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Diamond Wire Triple-Station Single-Wire Cutting Machine for SiC / Sapphire / Silicon Processing

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Brand Name :
ZMSH
Model Number :
Diamond Wire Triple-Station Single-Wire Cutting Machine
Certification :
rohs
Place of Origin :
CHINA
MOQ :
3
Price :
by case
Contact Supplier
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Diamond Wire Triple-Station Single-Wire Cutting Machine for SiC / Sapphire / Silicon Processing
Diamond Wire Triple-Station Single-Wire Cutting Machine for SiC / Sapphire / Silicon Processing
Diamond Wire Triple-Station Single-Wire Cutting Machine for SiC / Sapphire / Silicon Processing
Diamond Wire Triple-Station Single-Wire Cutting Machine for SiC / Sapphire / Silicon Processing

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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