GaN Epitaxial Wafer & SiC Epitaxial Wafer for sale - Shanghai GaNova Electronic Information Co., Ltd.

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

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Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

4 Inch P-Type Mg-Doped GaN On Sapphire Wafer SSP Resistivity~10Ω Cm LED Laser PIN Epitaxial Wafer

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4 Inch P-Type Mg-Doped GaN On Sapphire Wafer SSP Resistivity~10Ω Cm LED Laser PIN Epitaxial Wafer

4 Inch Blue LED GaN Epitaxial Wafer C Plane Flat Sapphire

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4 Inch Blue LED GaN Epitaxial Wafer C Plane Flat Sapphire

12.5mm 2inch Freestanding N GaN Epi Wafer Si Doped

12.5mm 2inch Freestanding N GaN Epi Wafer Si Doped

625um To 675um 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire

625um To 675um 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire

A Face N Type Free Standing GaN Gallium Single Crystal Substrate Un Doped

A Face N Type Free Standing GaN Gallium Single Crystal Substrate Un Doped

100mm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Thickness 5um - 6um

100mm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Thickness 5um - 6um

Freestanding N GaN Substrates N Face Surface Roughness 0.5um to1.5um

Freestanding N GaN Substrates N Face Surface Roughness 0.5um to1.5um

Flat Sapphire 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP

Flat Sapphire 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP

4inch GaN On Sapphire Wafer Blue Green LED Wafer Flat Sapphire 100 mm

4inch GaN On Sapphire Wafer Blue Green LED Wafer Flat Sapphire 100 mm

Shanghai GaNova Electronic Information Co., Ltd.

Shanghai GaNova Electronic Information Co., Ltd.

Business Type： Manufacturer

Main Products：

GaN Epitaxial Wafer

,

SiC Epitaxial Wafer

,

GaAs Epi Wafer

Employee Number： >100

Certification Level： Active Member

Shanghai GaNova Electronic Information Co., Ltd. is a company specialized in broadband semiconductor technology related materials, equipment, testing and analysis services and technical advice. Founded in 2020, we are a wholly-owned subsidiary of Suzhou Nanowin Technology Co., Ltd. Our team has profound technological accumulation and rich customer resources in the semiconductor industry, and is committed to bringing value to the industrial chain through knowledge flow, technology flow and information flow, providing customers with high-quality and diversified optional product solutions and...

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GaN Epitaxial Wafer

GaN Epitaxial Wafer

68 products available

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2 inch Free-standing SI-GaN Substrates

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SiC Epitaxial Wafer

SiC Epitaxial Wafer

42 products available

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

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GaAs Epi Wafer

GaAs Epi Wafer

15 products available

2inch GaAs Epi Wafer GaAs Undoped Substrates VGF

S-C-N Conduct 2inch GaAs Undoped Substrates High Electron Mobility

2inch GaAs Undoped Substrates GaAs Epi Wafer 0.4E18 To 1E18

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CVD Diamond Substrates

CVD Diamond Substrates

15 products available

Electronic Grade CVD Diamond Substrates Dielectric Constant 5.5

XRD<0.015º Electronic Grade Single Crystal Diamond For Heat Sink

3 X 3mm2 CVD Diamond Substrates N Content < 100ppb For Heat Sink

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Rapid Thermal Annealing System

Rapid Thermal Annealing System

2 products available

Boost Production Rapid Thermal Processing RTP-SA-8 Annealing System

150mm Rapid Thermal Annealing System With Three Sets Process Gases

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Hall Effect Sensor Tester

Hall Effect Sensor Tester

3 products available

Carrier Concentration Hall Effect Sensor Tester Semiconductor Industry

Semiconductor Materials Hall Effect Sensor Tester Carrier Concentration Measurement

Hall Coefficient Hall Effect Sensor Tester Mobility Resistivity Measurement

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New Products

0.015Ω•cm—0.025Ω•cm SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP

0.015Ω•cm—0.025Ω•cm SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP

2 Inch SiC Substrate 350μm For Demanding Power Electronics

2 Inch SiC Substrate 350μm For Demanding Power Electronics

P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices

P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices

47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to<11-20>±1°

47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to<11-20>±1°

150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm

150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm

4 Inch 4H-SiC Substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm For Power Microwave

4 Inch 4H-SiC Substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm For Power Microwave

150.0mm +0mm/-0.2mm SiC Epitaxial Wafer 47.5mm ± 1.5mm

150.0mm +0mm/-0.2mm SiC Epitaxial Wafer 47.5mm ± 1.5mm

6inch 4H SiC Substrate N Type P SBD Grade 350μm

6inch 4H SiC Substrate N Type P SBD Grade 350μm

N Type 6inch 4H Silicon Carbide Substrate Primary Flat Length 47.5mm

N Type 6inch 4H Silicon Carbide Substrate Primary Flat Length 47.5mm

150mm 4H SiC Wafer Semi Insulating Substrate 6inch 350μm

150mm 4H SiC Wafer Semi Insulating Substrate 6inch 350μm

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