Specifications
Transistor Polarity : :
N-Channel
Technology : :
GaN SiC
Product Category : :
RF JFET Transistors
Mounting Style : :
SMD/SMT
Gain : :
18.2 dB
Transistor Type : :
HEMT
Output Power : :
41.6 dBm
Package / Case : :
Die
Maximum Operating Temperature : :
+ 150 C
Vds - Drain-Source Breakdown Voltage : :
32 V
Packaging : :
Waffle
Maximum Drain Gate Voltage : :
100 V
Id - Continuous Drain Current : :
820 mA
Pd - Power Dissipation : :
17 W
Manufacturer : :
Qorvo
Description :
RF JFET Transistors DC-12GHz 12W 32V GaN P3dB @ 3GHz 41.2dBm
Description
The TGF2953,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Send your message to this supplier
Send Now

TGF2953

Ask Latest Price
Transistor Polarity : :
N-Channel
Technology : :
GaN SiC
Product Category : :
RF JFET Transistors
Mounting Style : :
SMD/SMT
Gain : :
18.2 dB
Transistor Type : :
HEMT
Contact Supplier
TGF2953

Beijing Silk Road Enterprise Management Services Co.,LTD

Verified Supplier
2 Years
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer, Exporter, Trading Company
Employee Number :
600~800
Certification Level :
Verified Supplier
Discover similar products
View More
Contact Supplier
Submit Requirement