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QPD1008
QPD1008
Specifications
Transistor Polarity : :
N-Channel
Technology : :
GaN SiC
Product Category : :
RF JFET Transistors
Mounting Style : :
SMD/SMT
Gain : :
17.5 dB
Transistor Type : :
HEMT
Output Power : :
162 W
Package / Case : :
NI-360
Maximum Operating Temperature : :
+ 85 C
Vds - Drain-Source Breakdown Voltage : :
50 V
Packaging : :
Tray
Id - Continuous Drain Current : :
4 A
Vgs - Gate-Source Breakdown Voltage : :
145 V
Pd - Power Dissipation : :
127 W
Manufacturer : :
Qorvo
Description :
RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN
Description
The QPD1008,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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QPD1008

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Product Detail
Transistor Polarity : :
N-Channel
Technology : :
GaN SiC
Product Category : :
RF JFET Transistors
Mounting Style : :
SMD/SMT
Gain : :
17.5 dB
Transistor Type : :
HEMT
Contact Supplier
QPD1008

Beijing Silk Road Enterprise Management Services Co.,LTD

Verified Supplier
2 Years
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer, Exporter, Trading Company
Main Products :
16-bit Microcontrollers - MCU, AC/DC Converters, Analog & Digital Crosspoint ICs
Employee Number :
600~800
Certification Level :
Verified Supplier
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