Specifications
Brand Name :
Infineon
Model Number :
FD150R12RT4HOSA1
Place of Origin :
Germany
MOQ :
1PCS
Price :
Bargain
Payment Terms :
L/C, T/T
Supply Ability :
500 PCS+48hours
Delivery Time :
48hours
Packaging Details :
Tray
Infineon :
FD150R12RT4HOSA1
Configuration :
Single
Collector-emitter maximum voltage VCEO :
1.2 kV
Collector-emitter saturation voltage :
2.15 V
Continuous collector current at 25C :
150 A
Gate-emitter leakage current :
100 nA
Pd-power dissipation :
790 W
Minimum working temperature :
-40℃
Maximum working temperature :
+150℃
Packaging :
10 PCS
Description

FD150R12RT4HOSA1 SP000711858 Infineon IGBT Module IGBT 1200V 150A

FD150R12RT4

Manufacturer: Infineon
Product Type: IGBT Modules
Configuration: Single
Collector-emitter maximum voltage VCEO: 1.2 kV
Collector-emitter saturation voltage: 2.15 V
Continuous collector current at 25 C: 150 A
Gate-emitter leakage current: 100 nA
Pd-power dissipation: 790 W
Minimum working temperature: - 40 C
Maximum working temperature: + 150 C
Package: Tray
Gate/emitter maximum voltage: 20 V
Installation style: SMD/SMT
Series: Trench/Fieldstop IGBT4
Packing Quantity: 10 PCS
Subcategory: IGBTs

Configuration Single IGBT Modules 1200V 150A FD150R12RT4HOSA1 SP000711858Configuration Single IGBT Modules 1200V 150A FD150R12RT4HOSA1 SP000711858

Send your message to this supplier
Send Now

Configuration Single IGBT Modules 1200V 150A FD150R12RT4HOSA1 SP000711858

Ask Latest Price
Brand Name :
Infineon
Model Number :
FD150R12RT4HOSA1
Place of Origin :
Germany
MOQ :
1PCS
Price :
Bargain
Payment Terms :
L/C, T/T
Contact Supplier
Configuration Single IGBT Modules 1200V 150A FD150R12RT4HOSA1 SP000711858

Eastern Stor International Ltd.

Verified Supplier
3 Years
guangdong, shenzhen
Since 2019
Business Type :
Distributor/Wholesaler, Agent, Importer, Exporter, Trading Company
Total Annual :
20000000-30000000
Employee Number :
50~80
Certification Level :
Verified Supplier
Contact Supplier
Submit Requirement