Specifications
Brand Name :
Infineon
Model Number :
F3L75R12W1H3_B27
Place of Origin :
Germany
MOQ :
1PCS
Price :
Bargain
Payment Terms :
L/C, T/T
Supply Ability :
500 PCS+48hours
Delivery Time :
48hours
Packaging Details :
Tray
Infineon :
F3L75R12W1H3_B27
Configuration :
3-Phase Inverter
Collector-emitter maximum voltage VCEO :
1.2 kV
Collector-emitter saturation voltage :
1.45 V
Continuous collector current at 25C :
45 A
Gate-emitter leakage current :
100 nA
Pd-power dissipation :
275 W
Minimum working temperature :
-40℃
Maximum working temperature :
+150℃
Packaging :
24 PCS
Description

F3L75R12W1H3_B27 SP001056132 Infineon IGBT Module LOW POWER EASY

F3L75R12W1H3B27BOMA1

Manufacturer: Infineon
Product Type: IGBT Modules
Configuration: 3-Phase Inverter
Collector-emitter maximum voltage VCEO: 1.2 kV
Collector-emitter saturation voltage: 1.45 V
Continuous collector current at 25 C: 45 A
Gate-emitter leakage current: 100 nA
Pd-power dissipation: 275 W
Package / Box: EasyPack1B
Minimum working temperature: - 40 C
Maximum working temperature: + 150 C
Package: Tray
Gate/emitter maximum voltage: 20 V
Series: High Speed IGBT H3
Packing Quantity: 24 PCS
Subcategory: IGBTs
Technology: Si

3 Phase IGBT Inverter Module Low Power F3L75R12W1H3_B27 SP0010561323 Phase IGBT Inverter Module Low Power F3L75R12W1H3_B27 SP001056132

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3 Phase IGBT Inverter Module Low Power F3L75R12W1H3_B27 SP001056132

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Brand Name :
Infineon
Model Number :
F3L75R12W1H3_B27
Place of Origin :
Germany
MOQ :
1PCS
Price :
Bargain
Payment Terms :
L/C, T/T
Contact Supplier
3 Phase IGBT Inverter Module Low Power F3L75R12W1H3_B27 SP001056132

Eastern Stor International Ltd.

Verified Supplier
3 Years
guangdong, shenzhen
Since 2019
Business Type :
Distributor/Wholesaler, Agent, Importer, Exporter, Trading Company
Total Annual :
20000000-30000000
Employee Number :
50~80
Certification Level :
Verified Supplier
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