PSRAM 64Mb high-speed CMOS pseudo-static random access memory IS66WVE4M16EBLL-70BLI

The IS66/67WVE4M16EALL/BLL/CLL and IS66/67WVE4M16TALL/BLL/CLL integrated memory device
containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M
words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where
data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby
current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate
power supply from the device core.
Features
 Asynchronous and page mode interface
 Dual voltage rails for optional performance
 ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
 BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
 CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
 Page mode read access
 Interpage Read access : 60ns, 70ns
 Intrapage Read access : 25ns
 Low Power Consumption
 Asynchronous Operation < 30 mA
 Intrapage Read < 23mA
 Standby < 200 uA (max.) at -40°C~85°C
 Deep power-down (DPD)
 ALL/CLL: < 3µA (Typ)
 BLL: < 10µA (Typ)
Notes:
 Low Power Feature
 Temperature Controlled Refresh
 Partial Array Refresh
 Deep power-down (DPD) mode
 Operating temperature Range
Industrial: -40°C~85°C
Automotive A1: -40°C~85°C
Automotive A2: -40°C~105°C
 Packages:
48-ball TFBGA

Packaging and transportation instructions

- According to the standard export packaging.

Customers can choose from cartons, wooden cases and wooden pallets according to their own requirements.

Q&A

1. How to obtain the price?

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2. What is your delivery time?

This depends on the quantity of the order and the season in which you place the order. Usually, we can ship the goods within 7 to 15 days (for small batches), and for large batches, it takes about 30 days.

3. What are your payment terms?

Factory price, 30% deposit, 70%T/T payment before shipment.

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