N Channel Mos Field Effect Transistor ,High Power Transistor -30V/-80A
N Channel Mos Field Effect Transistor Description
-30V/-80A
 R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V
 R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V
 100% Avalanche Tested
 Reliable and Rugged
 Halogen- Free Devices Available
N Channel Mos Field Effect Transistor Applications
Switching Application
 Power Management for DC/DC
 Battery Protection
Ordering and Marking Information
C2
 G045P03
 XYMXXXXXX
Package Code
 C2: PPAK5*6-8L
 Date Code
 XYMXXXXXX
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-
 Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
 ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines
 “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
 homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
 HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr-
 oduct and/or to this document at any time without notice.
Absolute Maximum Ratings

Typical Operating Characteristics
