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High Sensitivity NPN Phototransistor onsemi QSD123 Featuring Infrared Transparent Black Epoxy Package
High Sensitivity NPN Phototransistor onsemi QSD123 Featuring Infrared Transparent Black Epoxy Package
Specifications
Current - Collector(Ic) :
-
Collector - Emitter Voltage VCEO :
30V
Current - Dark(Id) :
100nA
Peak Wavelength :
880nm
Viewing Angle :
±12°
Operating Temperature :
-40℃~+100℃
Description :
30V 100nA 880nm Through Hole,D=5mm Phototransistors RoHS
Mfr. Part # :
QSD123
Model Number :
QSD123
Package :
Through Hole,D=5mm
Description

Product Overview

The QSD123 and QSD124 are NPN silicon phototransistors encapsulated in an infrared transparent, black T-1 3/4 package. These devices feature a narrow reception angle of 12, a daylight filter, and high sensitivity. They are designed for applications requiring detection of infrared light.

Product Attributes

  • Brand: ON Semiconductor (formerly Fairchild Semiconductor)
  • Package Type: T-1 3/4
  • Package Material and Color: Black Epoxy
  • Emitter Type: NPN Silicon Phototransistor
  • Matched Emitter Series: QED12X/QED22X/QED23X
  • Features: Narrow Reception Angle, Daylight Filter, High Sensitivity

Technical Specifications

Model Description Value Unit
QSD123, QSD124 Collector-Emitter Voltage (VCE) 30 V
QSD123, QSD124 Emitter-Collector Voltage (VEC) 5 V
QSD123, QSD124 Power Dissipation (PD) 100 mW
QSD123, QSD124 Operating Temperature (TOPR) -40 to +100 C
QSD123, QSD124 Storage Temperature (TSTG) -40 to +100 C
QSD123, QSD124 Soldering Temperature (Iron) 240 C (for 5 sec)
QSD123, QSD124 Soldering Temperature (Flow) 260 C (for 10 sec)
QSD123, QSD124 Peak Sensitivity Wavelength (PS) 880 nm
QSD123, QSD124 Reception Angle () 12
QSD123, QSD124 Collector-Emitter Dark Current (ICEO) (VCE=10V, Ee=0) 100 nA
QSD123, QSD124 Collector-Emitter Breakdown Voltage (BVCEO) (IC=1mA) 30 V
QSD123, QSD124 Emitter-Collector Breakdown Voltage (BVECO) (IE=100A) 5 V
QSD123 On-State Collector Current (IC(ON)) (Ee=0.5mW/cm, VCE=5V) 4 mA
QSD124 On-State Collector Current (IC(ON)) (Ee=0.5mW/cm, VCE=5V) 6 mA
QSD123, QSD124 Saturation Voltage (VCE(SAT)) (Ee=0.5mW/cm, IC=0.5mA) 0.4 V
QSD123, QSD124 Rise Time (tr) (VCC=5V, RL=100, IC=0.2mA) 7 s
QSD123, QSD124 Fall Time (tf) 7 s

2410010232_onsemi-QSD123_C184518.pdf

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High Sensitivity NPN Phototransistor onsemi QSD123 Featuring Infrared Transparent Black Epoxy Package

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Product Detail
Current - Collector(Ic) :
-
Collector - Emitter Voltage VCEO :
30V
Current - Dark(Id) :
100nA
Peak Wavelength :
880nm
Viewing Angle :
±12°
Operating Temperature :
-40℃~+100℃
Contact Supplier
High Sensitivity NPN Phototransistor onsemi QSD123 Featuring Infrared Transparent Black Epoxy Package

Changsha Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
hunan, changsha
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Analog and Digital Output, Pressure Sensors, Transducers, Sensor, Transducer Amplifiers
Employee Number :
300~500
Certification Level :
Verified Supplier
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