The KW700dy and KW700dys sensors are designed for non-contact reflective object sensing. Each unit comprises a Gallium Aluminum Arsenide (GaAlAs) LED and a silicon phototransistor mounted side-by-side on converging optical axes within a high-temperature black plastic housing. The phototransistor responds to radiation from the LED only when a reflective object passes within its field of view. These sensors are processed to ATK's military screening program patterned after MIL-STD-19500, offering high reliability for demanding applications.
| Part Number | LED Peak Wavelength | Sensor Reflection Distance (Inches [mm]) | Min. IF (mA) | Typ. IF (mA) | Max. IF (mA) | Max VO (Volts) | Max Lead Length / Spacing |
|---|---|---|---|---|---|---|---|
| KW700dy | 890 nm | 0.200" [5.08 mm] | 40 | 50 | 50 | 24" 26 AWG Wire | 26 AWG Wire |
| KW700dys | Reflective Surface Color/Pin | 3 / 2 / 4 / 1 | 40 | 50 | 50 | 24" 26 AWG Wire | 26 AWG Wire |
| Parameter | Symbol | Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Input Diode Forward Voltage | VF | IF = 50 mA | 1.1 | 1.6 | 1.8 | V |
| VF | IF = 50 mA, T = -55C | 0.9 | 1.4 | 1.7 | V | |
| VF | IF = 50 mA, T = 100C | 1.3 | 1.8 | 2.0 | V | |
| IR | VR = 2 V | 0.1 | 100 | A | ||
| Output Phototransistor Breakdown Voltage | V(BR) CEO | IC = 1 mA, IF = 0 | 50 | 110 | V | |
| V(BR) ECO | IE = 100 A, IF = 0 | 7 | 10 | V | ||
| IO(OFF) | VCE = 10 V, IF = 0 | 10 | 100 | nA | ||
| Output Phototransistor Dark Current | IO(OFF) | VCE = 10 V, IF = 0, T = 100C | 10 | 100 | nA | |
| Input Diode Forward Current | IF | 50 | mA | |||
| VR | 2 | V | ||||
| Power Dissipation (1) | 100 | mW | ||||
| Output Phototransistor Collector-Emitter Voltage | VCE | 50 | V | |||
| VEC | 7 | V | ||||
| Power Dissipation (1) | 100 | mW | ||||
| Output Phototransistor ON-State Collector Current | IC(ON) | d = 0.20" [5.08 mm] (2)(3)(6) | 50 | 200 | mA | |
| IC(ON) | VCE = 5 V, IF = 40 mA, T = -55C | 25 | mA | |||
| IC(ON) | VCE = 5 V, IF = 40 mA, T = 100C | 25 | mA | |||
| Crosstalk (No reflective surface) (3) | IX | VCE = 5 V, IF = 40 mA | 2 | A | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC = 10 mA, IF = 40 mA | 0.4 | V | ||
| Output Rise Time | VCE = 5 V, IF = 20 mA, RL = 1,000 | 12 | 20 | s | ||
| Output Fall Time | VCE = 5 V, IF = 20 mA, RL = 1,000 | 12 | 20 | s |
Notes: