HMC326MS8GETR RF Power Transistor - High Power High Linearity

HMC326MS8GETR, GaAs pHEMT, RF Power Transistor

Product Description:

The HMC326MS8GETR is a high-performance, GaAs pHEMT, RF power transistor. It is designed for use in a wide variety of applications such as cellular and broadband communications. This device offers excellent RF performance over a wide range of frequencies, with a maximum output power of 18.5 dBm and a maximum gain of 16 dB. The HMC326MS8GETR is also extremely linear, with a 3rd order intercept point of +40 dBm. This device is supplied in a lead-free, RoHS compliant, 3 x 3 mm QFN package.

Features:

• 18.5 dBm output power
• 16 dB gain
• +40 dBm 3rd order intercept point
• Operating frequency range: 0.2 to 2.0 GHz
• Lead-free, RoHS compliant, 3 x 3 mm QFN package

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