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Diode Full Bridge Power Module MICROCHIP APTDF200H60G with Symmetrical Design and M5 Power Connectors
Diode Full Bridge Power Module MICROCHIP APTDF200H60G with Symmetrical Design and M5 Power Connectors
Specifications
Operating Junction Temperature Range :
-40℃~+175℃@(Tj)
Voltage - Forward(Vf@If) :
2V@200A
Current - Rectified :
270A
Voltage - DC Reverse(Vr) :
600V
Description :
2V@200A 270A 600V Bridge Rectifiers RoHS
Mfr. Part # :
APTDF200H60G
Model Number :
APTDF200H60G
Description

Product Overview

The APTDF200H60G is a Diode Full Bridge Power Module designed for high-frequency applications. It features ultra-fast recovery times, soft recovery characteristics, high blocking voltage, and high current capabilities, making it suitable for demanding applications like Uninterruptible Power Supplies (UPS), induction heating, and welding equipment. Its symmetrical design and M5 power connectors contribute to very low stray inductance and direct mounting to heatsinks for efficient thermal management.

Product Attributes

  • Brand: Microsemi
  • Certifications: RoHS Compliant

Technical Specifications

SymbolParameterTest ConditionsMinTypMaxUnit
Absolute Maximum Ratings
VRMaximum DC reverse Voltage600V
VRRMMaximum Peak Repetitive Reverse Voltage600V
IF(AV)Maximum Average Forward CurrentDuty cycle = 50%, TC = 80C200A
IF(RMS)RMS Forward CurrentDuty cycle = 50%, TC = 45C270A
IFSMNon-Repetitive Forward Surge Current8.3ms, TC = 45C1500A
Electrical Characteristics
VFDiode Forward VoltageIF = 200A, TC = 25C1.62.0V
VFDiode Forward VoltageIF = 400A, TC = 25C2.0V
VFDiode Forward VoltageIF = 200A, Tj = 125C1.3V
IRMMaximum Reverse Leakage CurrentVR = 600V, Tj = 25C350A
IRMMaximum Reverse Leakage CurrentVR = 600V, Tj = 125C600A
CTJunction CapacitanceVR = 600V380pF
Dynamic Characteristics
trrReverse Recovery TimeIF=1A,VR=30V, di/dt = 200A/s, Tj = 25C34ns
trrReverse Recovery TimeTj = 125C160220ns
QrrReverse Recovery ChargeTj = 25C580nC
QrrReverse Recovery ChargeTj = 125C3060nC
IRRMReverse Recovery CurrentIF = 200A, VR = 400V, di/dt = 200A/s, Tj = 125C10A
trrReverse Recovery TimeIF = 200A, VR = 400V, di/dt = 2000A/s, Tj = 125C100ns
QrrReverse Recovery ChargeIF = 200A, VR = 400V, di/dt = 2000A/s, Tj = 125C5.78C
IRRMReverse Recovery CurrentIF = 200A, VR = 400V, di/dt = 2000A/s, Tj = 125C88A
Thermal and Package Characteristics
RthJCJunction to Case Thermal Resistance0.285C/W
VISOLRMS Isolation Voltage, any terminal to caset =1 min, 50/60Hz4000V
TJOperating junction temperature range-40175C
TSTGStorage Temperature Range-40125C
TCOperating Case TemperatureTo heatsink-40100C
Mounting torqueFor terminalsM635N.m
Mounting torqueFor terminalsM523.5N.m
WtPackage Weight300g

2504101957_MICROCHIP-APTDF200H60G_C17572706.pdf

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Diode Full Bridge Power Module MICROCHIP APTDF200H60G with Symmetrical Design and M5 Power Connectors

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Product Detail
Operating Junction Temperature Range :
-40℃~+175℃@(Tj)
Voltage - Forward(Vf@If) :
2V@200A
Current - Rectified :
270A
Voltage - DC Reverse(Vr) :
600V
Description :
2V@200A 270A 600V Bridge Rectifiers RoHS
Mfr. Part # :
APTDF200H60G
Contact Supplier
Diode Full Bridge Power Module MICROCHIP APTDF200H60G with Symmetrical Design and M5 Power Connectors

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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