This Three Phase Rectifier Bridge with Fast Diodes and "Softstart" Thyristor offers a robust solution for power supply applications. It features a package with a DCB ceramic base plate, providing an isolation voltage of 3600 V~. The planar passivated chips and fast recovery diodes contribute to reduced EMI, while a separate thyristor enables softstart functionality. Solderable terminals and easy mounting with two screws enhance usability. Advantages include space and weight savings, improved temperature and power cycling, and up to 10 dB lower EMI/RFI compared to standard rectifiers.
| Symbol | Conditions | Diode | Thyristor | Unit |
| VUC | VRRM | 1200/1600 | 1200/1600 | V |
| IdAVM | module | 39 | - | A |
| ITAVM | DC | - | 31 | A |
| IFSM, ITSM | TVJ = 45C, t = 10 ms (50 Hz), sine, VR = 0 | 300 | 400 | A |
| IFSM, ITSM | TVJ = 45C, t = 8.3 ms (60 Hz), sine, VR = 0 | 330 | 440 | A |
| IFSM, ITSM | TVJ = TVJM, t = 10 ms (50 Hz), sine, VR = 0 | 270 | 360 | A |
| IFSM, ITSM | TVJ = TVJM, t = 8.3 ms (60 Hz), sine, VR = 0 | 300 | 400 | A |
| I2t | TVJ = 45C, t = 10 ms (50 Hz), sine, VR = 0 | 450 | 800 | A2s |
| I2t | TVJ = 45C, t = 8.3 ms (60 Hz), sine, VR = 0 | 460 | 810 | A2s |
| I2t | TVJ = TVJM, t = 10 ms (50 Hz), sine, VR = 0 | 365 | 650 | A2s |
| I2t | TVJ = TVJM, t = 8.3 ms (60 Hz), sine, VR = 0 | 380 | 670 | A2s |
| (di/dt)cr | TVJ = TVJM, repetitive, IT = 50 A, f = 400 Hz, tP = 200 s, VD = 2/3 VDRM, IG = 0.3 A | 150 | - | A/s |
| (di/dt)cr | TVJ = TVJM, non repetitive, IT = ITAVM, diG /dt = 0.3 A/s | - | 500 | A/s |
| (dv/dt)cr | TVJ = TVJM; VDR = 2/3 VDRM, RGK = ; method 1 (linear voltage rise) | 200 | - | V/s |
| VRGM | 10 | - | V | |
| PGM | TVJ = TVJM, tp = 30 s | < 10 | - | W |
| PGM | IT = ITAVM, tp = 10 ms | < 1 | - | W |
| PGAVM | 0.5 | - | W | |
| TVJ | Operating Temperature | -40...+125 | -40...+125 | C |
| TVJM | Peak Temperature | 125 | 125 | C |
| Tstg | Storage Temperature | -40...+125 | -40...+125 | C |
| VISOL | 50/60 Hz, RMS, t = 1 min, IISOL < 1 mA | 3000 | 3000 | V~ |
| VISOL | 50/60 Hz, RMS, t = 1 s, IISOL < 1 mA | 3600 | 3600 | V~ |
| Md | Mounting torque (M5) | 2-2.5 | 2-2.5 | Nm |
| Md | Mounting torque (10-32 UNF) | 18-22 | 18-22 | lb.in |
| Weight | typ. | 28 | 28 | g |
| IR, ID | VR = VRRM; VD = VDRM, TVJ = TVJM | < 5 | < 5 | mA |
| IR, ID | TVJ = 25C | < 0.3 | < 0.3 | mA |
| VF, VT | IF = 55 A; IT = 45 A, TVJ = 25C | <1.85 | < 1.4 | V |
| VT0 | For power-loss calculations only | 1.2 | 0.85 | V |
| rT | TVJ = 125C | 16 | 10 | m |
| VGT | VD = 6 V, TVJ = 25C | - | < 1.5 | V |
| IGT | VD = 6 V, TVJ = 25C | - | < 80 | mA |
| VGD | VD = 2/3 VDRM, TVJ = TVJM | - | < 0.2 | V |
| IGD | VD = 2/3 VDRM, TVJ = TVJM | - | < 5 | mA |
| IL | tG = 30 s; IG = 0.3 A, TVJ = 25C | - | < 300 | mA |
| IH | VD = 6 V; RGK = , TVJ = 25C | - | < 100 | mA |
| tgd | VD = VDRM; IG = 0.3 A, TVJ = 25C | - | < 2.5 | s |
| tq | IT = 15 A; tp = 300 s; -di/dt = 10 A/s; TVJ = 125C | - | typ. 130 | s |
| trr | IF = 10 A; VR = VRRM, TVJ = 25C | < 1.5 | - | s |
| RthJC | per thyristor (diode); DC current | 1.4 | 0.9 | K/W |
| RthJC | per module | 0.233 | - | K/W |
| RthJH | per thyristor (diode); DC current | 2.0 | 1.1 | K/W |
| RthJH | per module | 0.333 | - | K/W |
| dS | Creeping distance on surface | 7 | - | mm |
| dA | Creepage distance in air | 7 | - | mm |
| a | Max. allowable acceleration | 50 | - | m/s2 |