Specifications
Holding Current (Ih) :
40mA
Current - Gate Trigger(Igt) :
-
Voltage - On State(Vtm) :
1.9V
Current - On State(It(RMS)) :
12A
Peak off - state voltage(Vdrm) :
800V
SCR Type :
1 SCR
Gate Trigger Voltage (Vgt) :
1V
Operating Temperature :
-
Description :
40mA 800V 1 SCR TO-252-2(DPAK) SCRs RoHS
Mfr. Part # :
MCR12DCNT4G
Model Number :
MCR12DCNT4G
Package :
TO-252-2(DPAK)
Description

Product Overview

The MCR12DCM and MCR12DCN are surface-mount thyristors designed for half-wave AC control applications. They are suitable for motor controls, heating controls, and power supplies, or any application requiring silicon gate-controlled devices for half-wave operation. Key features include a small size, passivated die for reliability, low-level triggering and holding characteristics, and epoxy that meets UL 94 V-0. These devices also offer high ESD ratings.

Product Attributes

  • Brand: Littelfuse, Inc.
  • Certifications: UL 94 V-0 (Epoxy)
  • ESD Ratings: Human Body Model, 3B > 8000 V; Machine Model, C > 400 V
  • Pb-Free Packages Available

Technical Specifications

Rating SymbolMCR12DCMMCR12DCNUnitDescription
VDRM, VRRM600800VPeak Repetitive Off-State Voltage (Note 1) (-40 to 110C, Sine Wave, 50 to 60 Hz, Gate Open)
IT (RMS)12AOn-State RMS Current (180 Conduction Angles; TC = 90C)
IT(AV)7.8AAverage On-State Current (180 Conduction Angles; TC = 90C)
ITSM100APeak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125C)
I2t41AsecCircuit Fusing Consideration (t = 8.3 ms)
PGM5.0WForward Peak Gate Power (Pulse Width 10 sec, TC = 90C)
PGM (AV)0.5WForward Average Gate Power (t = 8.3 msec, TC = 90C)
IGM2.0AForward Peak Gate Current (Pulse Width 1.0 sec, TC= 90C)
TJ-40 to 110COperating Junction Temperature Range
Tstg-40 to 150CStorage Temperature Range
RJC2.2C/WThermal Resistance, Junction-to-Case
RJA88C/WThermal Resistance, Junction-to-Ambient
RJA (Note 2)80C/WThermal Resistance, Junction-to-Ambient
TL260CMaximum Lead Temperature for Soldering Purposes 1/8" from Case for 10 Seconds
IDRM, IRRM0.01 (TJ = 25C), 5.0 (TJ = 125C)mAPeak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open)
dv/dt50 to 200V/sCritical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C)
VTM1.3 to 1.9VPeak Forward On-State Voltage (Note 2) (ITM = 16 A)
IGT0.5 to 1.0 (TJ = 25C), 2.0 (TJ = 40C)mAGate Trigger Current (Continuous dc) (VD = 12 V; RL = 100 )
VGT0.3 to 1.0 (TJ = 25C), 1.5 (TJ = 40C)VGate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 )
tgt0.2VGate Non-Trigger Voltage (VD = 12 V, RL = 100 ) TJ = 125C
IH4.0 to 40 (TJ = 25C), 80 (TJ = 40C)mAHolding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA)
IL4.0 to 40 (VD = 12 V, IG = 20 A, TJ = 25C), 80 (VD = 12 V, IG = 40 A, TJ = -40C)mALatch Current

2411272159_Littelfuse-MCR12DCNT4G_C151705.pdf

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Motor Control Heating Power Supply Thyristor Littelfuse MCR12DCNT4G Half Wave AC Silicon Gate Device

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Holding Current (Ih) :
40mA
Current - Gate Trigger(Igt) :
-
Voltage - On State(Vtm) :
1.9V
Current - On State(It(RMS)) :
12A
Peak off - state voltage(Vdrm) :
800V
SCR Type :
1 SCR
Contact Supplier
Motor Control Heating Power Supply Thyristor Littelfuse MCR12DCNT4G Half Wave AC Silicon Gate Device

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier

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