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P gate fully diffused mold SCR Renesas 3P4MHYM AZ with UL94V0 epoxy resin in compact TO202AA package
P gate fully diffused mold SCR Renesas 3P4MHYM AZ with UL94V0 epoxy resin in compact TO202AA package
P gate fully diffused mold SCR Renesas 3P4MHYM AZ with UL94V0 epoxy resin in compact TO202AA package
P gate fully diffused mold SCR Renesas 3P4MHYM AZ with UL94V0 epoxy resin in compact TO202AA package
Specifications
Holding Current (Ih) :
-
Current - Gate Trigger(Igt) :
-
Voltage - On State(Vtm) :
-
Current - On State(It(RMS)) :
-
Peak off - state voltage(Vdrm) :
-
Current - Surge(Itsm@f) :
-
Gate Trigger Voltage (Vgt) :
-
Operating Temperature :
-
Description :
SCRs RoHS
Mfr. Part # :
3P4MH(YM)-AZ
Model Number :
3P4MH(YM)-AZ
Description

Product Overview

The 3P4MH and 3P6MH are P-gate fully diffused mold SCRs featuring a small and lightweight TO-202AA package, making them easy to handle and process. They employ flame-retardant epoxy resin (UL94V-0) and are designed for noncontact switching applications in various electronic and industrial equipment.

Product Attributes

  • Brand: Renesas Electronics (formerly NEC Electronics Corporation)
  • Origin: Japan
  • Material: Flame-retardant epoxy resin (UL94V-0)
  • Certifications: UL94V-0

Technical Specifications

ParameterSymbol3P4MH3P6MHUnitConditionsRemarks
Non-repetitive peak reverse voltageVRSM500700VRGK = 1 k
Non-repetitive peak off-state voltageVDSM500700VRGK = 1 k
Repetitive peak reverse voltageVRRM400600VRGK = 1 k
Repetitive peak off-voltageVDRM400600VRGK = 1 k
Average on-state currentIT(AV)33ATc = 87C, Single half-wave, = 180Refer to Figure 11.
Effective on-state currentIT(RMS)4.74.7A
Surge on-state currentITSM65 (f = 50 Hz, Sine half-wave, 1 cycle)
70 (f = 60 Hz, Sine half-wave, 1 cycle)		65 (f = 50 Hz, Sine half-wave, 1 cycle)
70 (f = 60 Hz, Sine half-wave, 1 cycle)		ARefer to Figure 2.
Fusing current it 2dt2020A1 mst10 ms
Critical rate of rise of on-state currentdIT/dt5050A/s
Peak gate power dissipationPGM22Wf50 Hz, Duty10%Refer to Figure 3.
Average gate power dissipationPG(AV)0.20.2W
Peak gate forward currentIFGM11Af50 Hz, Duty10%
Peak gate reverse voltageVRGM66V
Junction temperatureTj40 to +12540 to +125C
Storage temperatureTstg55 to +15055 to +150C
Repeat peak reverse currentIRRM100 ATj = 25C, VRM = Rated, RGK = 1 k

2404071551_RENESAS-3P4MH-YM-AZ_C3615162.pdf

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P gate fully diffused mold SCR Renesas 3P4MHYM AZ with UL94V0 epoxy resin in compact TO202AA package

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Product Detail
Holding Current (Ih) :
-
Current - Gate Trigger(Igt) :
-
Voltage - On State(Vtm) :
-
Current - On State(It(RMS)) :
-
Peak off - state voltage(Vdrm) :
-
Current - Surge(Itsm@f) :
-
Contact Supplier
P gate fully diffused mold SCR Renesas 3P4MHYM AZ with UL94V0 epoxy resin in compact TO202AA package
P gate fully diffused mold SCR Renesas 3P4MHYM AZ with UL94V0 epoxy resin in compact TO202AA package

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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