Specifications
Holding Current (Ih) :
600mA
Current - Gate Trigger(Igt) :
200mA
Voltage - On State(Vtm) :
1.88V
Current - On State(It(RMS)) :
756A
Peak off - state voltage(Vdrm) :
400V
SCR Type :
1 SCR
Operating Temperature :
-40℃~+125℃
Gate Trigger Voltage (Vgt) :
3V
Description :
600mA 200mA 400V 1 SCR TO-200AB SCRs RoHS
Mfr. Part # :
P0366WC04B
Model Number :
P0366WC04B
Package :
TO-200AB
Description

Fast Turn-off Thyristor Types P0366WC04# & P0366WC08#

This datasheet details the P0366WC04# and P0366WC08# series of fast turn-off thyristors. These devices are designed for high-power applications requiring rapid switching capabilities and robust performance under demanding conditions. Their fast turn-off characteristics make them suitable for use in advanced power electronic systems where efficient and reliable operation is critical.

Product Attributes

  • Product Series: P0366WC04#, P0366WC08#

Technical Specifications

Parameter Rating Units Test Conditions
Repetitive peak off-state voltage (VDRM) 400-800 V Note 1
Non-repetitive peak off-state voltage (VDSM) 400-800 V Note 1
Repetitive peak reverse voltage (VRRM) 400-800 V Note 1
Non-repetitive peak reverse voltage (VRSM) 500-900 V Note 1
Mean on-state current (IT(AV)) 366 A Tsink=55C, Note 2
Mean on-state current (IT(AV)) 130 A Tsink=85C, Note 2
Nominal RMS on-state current (IT(RMS)) 756 A Tsink=25C, Note 2
D.C. on-state current (IT(d.c.)) 590 A Tsink=25C, Note 4
Peak non-repetitive surge (ITSM) tp=10ms 4700 A VRM=0.6VRRM, Note 5
Peak non-repetitive surge (ITSM2) tp=10ms 5170 A VRM10V, Note 5
I2t capacity for fusing (I2t) tp=10ms 11010 As VRM=0.6VRRM, Note 5
I2t capacity for fusing (I2t) tp=10ms 13410 As VRM10V, Note 5
Maximum rate of rise of on-state current (di/dt)cr (repetitive) 500 A/s Note 6
Maximum rate of rise of on-state current (di/dt)cr (non-repetitive) 1000 A/s Note 6
Peak forward gate voltage (VFGM) 12 V
Peak forward gate current (IFGM) 18 A
Peak reverse gate voltage (VRGM) 5 V
Mean forward gate power (PG(AV)) 1.5 W
Peak forward gate power (PGM) (100s pulse width) 60 W
Non-trigger gate voltage (VGD) 0.25 V Note 7
Operating temperature range (THS) -40 to +125 C
Storage temperature range (Tstg) -40 to +150 C
Maximum peak on-state voltage (VTM) 1.88 V ITM=715A
Threshold voltage (VT0) 1.4 V
Slope resistance (rT) 0.67 m
Critical rate of rise of off-state voltage ((dv/dt)cr) 200 V/s VD=80% VDRM
Peak off-state current (IDRM) 30 mA Rated VDRM
Peak reverse current (IRRM) 30 mA Rated VRRM
Gate trigger voltage (VGT) 3.0 V Tj=25C
Gate trigger current (IGT) 200 mA Tj=25C, VD=6V, IT=1A
Holding current (IH) 600 mA Tj=25C
Recovered charge (Qrr) 25 C ITM=300A, tp=500s, di/dt=20A/s, Vr=50V
Recovered charge, 50% Chord (Qra) 10 C
Turn-off time (tq) 15-30 s ITM=300A, tp=500s, di/dt=20A/s, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/s
Turn-off time (tq) 10-15 s ITM=300A, tp=500s, di/dt=50A/s, Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/s
Thermal resistance, junction to heatsink (RthJK) (Double side cooled) 0.095 K/W
Thermal resistance, junction to heatsink (RthJK) (Single side cooled) 0.190 K/W
Mounting force (F) 3.3-5.5 kN
Weight (Wt) 70 g

2506271131_Littelfuse-IXYS-P0366WC04B_C17489536.pdf

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High power fast turn off thyristor Littelfuse IXYS P0366WC04B for demanding electronic applications

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Holding Current (Ih) :
600mA
Current - Gate Trigger(Igt) :
200mA
Voltage - On State(Vtm) :
1.88V
Current - On State(It(RMS)) :
756A
Peak off - state voltage(Vdrm) :
400V
SCR Type :
1 SCR
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High power fast turn off thyristor Littelfuse IXYS P0366WC04B for demanding electronic applications
High power fast turn off thyristor Littelfuse IXYS P0366WC04B for demanding electronic applications
High power fast turn off thyristor Littelfuse IXYS P0366WC04B for demanding electronic applications

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier

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