The DB3 is a bidirectional trigger diode designed for high reliability in a small glass structure. It features a low breakover current and is suitable for applications requiring precise voltage triggering. The diode is capable of withstanding high temperature soldering and offers consistent performance across various conditions.
| Symbol | Units | Test Condition | Min. | Typ. | Max. |
|---|---|---|---|---|---|
| VR | Volts | 32 | |||
| VBO | Volts | 28 | 36 | ||
| I+VBOI-I-VBO | Volts | 3 | |||
| I | Volts | 100 | |||
| V | A | 5 | |||
| VO | S | -3 | |||
| IBO | A | (NOTE 1) | 5 | ||
| tr | mW | 10 | |||
| IB | mW | 150 | |||
| Pd | C/W | 400 | |||
| RJA | C/W | 150 | |||
| RJL | C | -40 | 125 | ||
| TJ,TSTG | C | -40 | 125 | ||
| Weight | ounce, gram | 0.005 | 0.14 |
Note 1: IBO from IBO to 10mA.
Note 2: Ratings at 25 C ambient temperature unless otherwise specified.
Note 3: Electrical characteristic applicable in forward and reverse directions.
Note 4: Connected in parallel with the devices.
Note 5: Test Circuit for Diagram 3: C=22nF, VR=0.5VBO, TA=65 C, tp=20s, f=100Hz.
Note 6: Test Circuit for Diagram 2: C=22nF.
Note 7: Test Circuit for Diagram 1: C=22nF.