The BT151-500R is a high-reliability and stable thyristor utilizing advanced glass passivation technology. It features a low on-state voltage drop and is specifically designed for various power control applications. Its applications include universal switches, small motor controllers, leakage protectors, lamp relays, exciters, logic IC drivers, and high-power thyristor gate drivers.
| Name | Symbol | Test Condition | BT151 | Unit | Min | Typ | Max |
| Off-state repetitive peak current | IDRM | VDRM=VRRM, Tj=25 | A | 5 | |||
| VDRM=VRRM, Tj=125 | mA | 1 | |||||
| On-state voltage | VTM | IT=23A, Tj=25 | V | 1.7 | |||
| Holding current | IH | VD=12V, IG=100mA | mA | 20 | |||
| Latching current | IL | VD=12V, IG=100mA | mA | 40 | |||
| Gate trigger current | IGT | VD=12V, IT=0.1A | mA | 15 | |||
| Gate trigger voltage | VGT | V | 1.3 | ||||
| Rate of rise of off-state voltage | dV/dt | VDM=67%VDRM, Gate open, Tj=125 | V/s | 130 | |||
| Off-state repetitive peak voltage | VDRM/VRRM | 600/800 | V | ||||
| On-state RMS current | IT(RMS) | Tc=105 | 12 | A | |||
| Surge current | ITSM | Sinusoidal, 60Hz, t=10ms | 100 | A | |||
| It | tp=10ms | 50 | As | ||||
| Rate of rise of on-state current | dI/dt | ITM=50A, IG=0.2A, dIG/dt=0.2 A/s | 50 | A/s | |||
| Gate peak current | IGM | Tj=125, tp=20s | A | 2 | |||
| Gate peak voltage | VGM | Tj=125 | V | 5 | |||
| Gate peak power | PGM | Tj=125 | W | 5 | |||
| Average gate power | PG(AV) | Tj=125 | W | 0.5 | |||
| Junction temperature | Tj | 125 | |||||
| Storage temperature | Tstg | -40~150 |