Specifications
Td(off) :
530ns
Pd - Power Dissipation :
385W
Td(on) :
390ns
Collector-Emitter Breakdown Voltage (Vces) :
1.2kV
Reverse Transfer Capacitance (Cres) :
6nF
IGBT Type :
IGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
6V@75mA
Pulsed Current- Forward(Ifm) :
520A
Reverse Recovery Time(trr) :
350ns
Description :
385W 1.2kV IGBT Module Single IGBTs RoHS
Mfr. Part # :
7MBR75VB120-50
Model Number :
7MBR75VB120-50
Description

Product Overview

The 7MBR75VB120-50 is an IGBT Module (V series) from Fuji Electric, designed for high-power applications. It features a compact P.C.Board mount package and integrates an Inverter, Converter Diode Bridge, and Dynamic Brake Circuit. This module offers low VCE(sat) and is RoHS compliant, making it suitable for demanding industrial applications.

Product Attributes

  • Brand: Fuji Electric
  • Product Line: IGBT Module (V series)
  • Certifications: RoHS compliant

Technical Specifications

ItemSymbolConditionsValueUnit
InverterVCES1200V
VGES±20V
IC (Continuous)TC=100°C75A
ICP (1ms)TC=80°C150A
-IC pulse (1ms)150A
PC (1 device)385W
BrakeVCES1200V
VGES±20V
IC (Continuous)TC=80°C50A
ICP (1ms)TC=80°C100A
PC (1 device)280W
ConverterVRRM1600V
IO (50Hz/60Hz, sine wave)75A
IFSM (10ms, Tj=150°C, half sine wave)520A
DiodeVRRM1200V
I2t (Non-Repetitive)1352A²s
TemperatureTj (Inverter, Brake)175°C
Tj (Converter)150°C
Tstg-40 ~ +125°C
Electrical Characteristics (Inverter)ICESVGE=0V, VCE=1200V1.0mA
IGESVCE=0V, VGE=±20V200nA
VGE(th)VCE=20V, IC=75mA6.0 - 7.0V
Electrical Characteristics (Brake)ICESVGE=0V, VCE=1200V1.0mA
IGESVCE=0V, VGE=±20V200nA
VCE(sat) (terminal)VGE=15V, IC=50A, Tj=25°C2.20 - 2.65V
Electrical Characteristics (Converter)VFM (chip)IF=75A1.40 -V
IRRMVR=1600V1.0mA
ThermistorResistanceT=25°C5000Ω
Thermal ResistanceRth(j-c)Inverter IGBT0.39°C/W
Rth(j-c)Inverter FWD0.55°C/W
Rth(j-c)Brake IGBT0.54°C/W
Rth(j-c)Converter Diode0.43°C/W

2504101957_Fuji-Electric-7MBR75VB120-50_C42387495.pdf

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Fuji Electric 7MBR75VB120 50 IGBT Module with Integrated Inverter and Converter Diode Bridge Circuit

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Td(off) :
530ns
Pd - Power Dissipation :
385W
Td(on) :
390ns
Collector-Emitter Breakdown Voltage (Vces) :
1.2kV
Reverse Transfer Capacitance (Cres) :
6nF
IGBT Type :
IGBT Module
Contact Supplier
Fuji Electric 7MBR75VB120 50 IGBT Module with Integrated Inverter and Converter Diode Bridge Circuit

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier

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