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IGBT transistor HXY MOSFET IKW40N120CH7XKSA1-HXY for motor drives and onboard charger applications
IGBT transistor HXY MOSFET IKW40N120CH7XKSA1-HXY for motor drives and onboard charger applications
Specifications
Pd - Power Dissipation :
441W
Td(off) :
262ns
Td(on) :
25ns
Collector-Emitter Breakdown Voltage (Vces) :
1.2kV
Reverse Transfer Capacitance (Cres) :
93pF
IGBT Type :
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
4.3V@1mA
Gate Charge(Qg) :
346nC@15V
Reverse Recovery Time(trr) :
94ns
Switching Energy(Eoff) :
2.3mJ
Turn-On Energy (Eon) :
1.3mJ
Input Capacitance(Cies) :
3.98nF
Pulsed Current- Forward(Ifm) :
160A
Output Capacitance(Coes) :
157pF
Description :
441W 1.2kV FS (Field Stop) TO-247 Single IGBTs RoHS
Mfr. Part # :
IKW40N120CH7XKSA1-HXY
Model Number :
IKW40N120CH7XKSA1-HXY
Package :
TO-247
Description

Product Overview

The IKW40N120CH7XKSA1 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficiency, such as motor drives and onboard chargers (OBC).

Product Attributes

  • Brand: HUAXUANYANG
  • Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
  • Certifications: AEC-Q101 Qualified, Halogen Free and Green Devices Available (RoHS Compliant)

Technical Specifications

ParameterValueUnitDescription
VCES1200VCollector-Emitter Voltage
IC (@TC=25C)80ACollector Current
IC (@TC=100C)40ACollector Current
ICM160APulsed Collector Current, tp limited by TJmax
VCE(sat).typ (@IC=40A, TJ=25C)1.70VCollector-Emitter Saturation Voltage
VGE(TH)4.3 - 6.3VGate Threshold Voltage
PD (@TC=25C)441WPower Dissipation
TJmax, Tstg-55 to 175Operating Junction and Storage Temperature Range
RJC (IGBT)0.34/WJunction-to-Case (IGBT)
RJA40/WJunction-to-Ambient
Package TypeTO-247
Device Per Unit30TubeQuantity

2509181738_HXY-MOSFET-IKW40N120CH7XKSA1-HXY_C49003410.pdf

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IGBT transistor HXY MOSFET IKW40N120CH7XKSA1-HXY for motor drives and onboard charger applications

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Product Detail
Pd - Power Dissipation :
441W
Td(off) :
262ns
Td(on) :
25ns
Collector-Emitter Breakdown Voltage (Vces) :
1.2kV
Reverse Transfer Capacitance (Cres) :
93pF
IGBT Type :
FS (Field Stop)
Contact Supplier
IGBT transistor HXY MOSFET IKW40N120CH7XKSA1-HXY for motor drives and onboard charger applications

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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