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1200V 50A IGBT Transistor HXY MOSFET APT50GF120B2RG-HXY for High Power Solar Inverter EV Charger and UPS
1200V 50A IGBT Transistor HXY MOSFET APT50GF120B2RG-HXY for High Power Solar Inverter EV Charger and UPS
Specifications
Td(off) :
216ns
Pd - Power Dissipation :
600W
Td(on) :
55ns
Collector-Emitter Breakdown Voltage (Vces) :
1.2kV
Reverse Transfer Capacitance (Cres) :
42pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
5.1V@250uA
Gate Charge(Qg) :
200nC@15V
Operating Temperature :
-40℃~+175℃
Reverse Recovery Time(trr) :
380ns
Switching Energy(Eoff) :
1.8mJ
Turn-On Energy (Eon) :
2.65mJ
Input Capacitance(Cies) :
6.42nF
Pulsed Current- Forward(Ifm) :
200A
Output Capacitance(Coes) :
195pF
Description :
600W 1.2kV TO-247P Single IGBTs RoHS
Mfr. Part # :
APT50GF120B2RG-HXY
Model Number :
APT50GF120B2RG-HXY
Package :
TO-247P
Description

Product Overview

The APT50GF120B2RG is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, and Solar String Inverters.

Product Attributes

  • Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
  • Model: APT50GF120B2RG
  • Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
  • Package: TO-247P
  • Packing: 30PCS

Technical Specifications

SymbolParameterConditionsMin.Typ.Max.Unit
Absolute Maximum Ratings
VCECollector emitter voltage1200V
ICDC collector current(1)TC = 25C100A
ICDC collector current(1)TC = 100C50A
ICMPulsed collector currentTC = 25C200A
IFMaximum Diode forward current(1)TC = 25C100A
IFMaximum Diode forward current(1)TC = 100C50A
IFMDiode pulsed currentTC = 25C200A
VGEGate-Emitter voltageTVJ = 25C±20V
VGETransient Gate-Emitter Voltage(tp ≤ 10µs, D < 0.010) TVJ = 25C±30V
PtotPower DissipationTC = 25C600W
PtotPower DissipationTC = 100C300W
TVJOperating Junction Temperature Range-40+175°C
TSTGStorage Temperature Range-55+150°C
Electrical Characteristics
V(BR)CESCollector - Emitter Breakdown VoltageVGE = 0V , IC = 0.5mA1200--V
VCESATCollector - Emitter Saturation VoltageVGE = 15V , IC = 50A1.92.3V
VCESATCollector - Emitter Saturation VoltageVGE = 15V , IC = 50A ,TVJ = 175°C2.8-V
VFDiode forward voltageVGE = 0V , IC = 50A2.7-V
VFDiode forward voltageVGE = 0V , IC = 50A ,TVJ = 175°C2.4-V
VGE(th)Gate-Emitter threshold voltageVGE = VCE, IC = 250mA5.15.86.5V
ICESZero Gate voltage Collector currentVCE = 650V , VGE = 0V-350.0mA
IGESGate-Emitter leakage currentVGE = ±20V , VCE = 0V-±100nA
gfsTransconductanceVGE = 20V, IC = 50A30-S
Dynamic Characteristics
CiesInput CapacitanceVGE = 0V, VCE = 25V, f = 1MHz6420-pF
CoesOutput Capacitance195-pF
CresReverse Transfer Capacitance42-pF
QgGate ChargeVGE = 0 to 15V VCE = 520V, IC = 50A200-nC
QgeGate to Emitter charge46-nC
QgcGate to Collector charge75-nC
Switching Characteristics
td(on)Turn-On Delay TimeVGE = 15V, VCC = 600V IC= 50A, RG(off) = 10Ω55-ns
trTurn-On Rise Time32-ns
td(off)Turn-Off Delay Time216-ns
tfTurn-Off Fall Time38-ns
EonTurn-on energy2.65-mJ
EoffTurn-off energy1.8-mJ
EtsTotal switching energy4.45-mJ
Diode Recovery Characteristics
TrrReverse recovery timeVR = 600 V, IF = 50 A, di/dt = 600 A/µS380-ns
QrrReverse recovery charge2.31-mC
IrrmPeak reverse recovery current15.5-A
Thermal Resistance
RθJAThermal resistance: junction - ambient40°C/W
RθJCIGBT Thermal resistance: junction - case0.25-°C/W
RθJCDiode Thermal resistance: junction - case0.49-°C/W

2509181739_HXY-MOSFET-APT50GF120B2RG-HXY_C49003483.pdf

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1200V 50A IGBT Transistor HXY MOSFET APT50GF120B2RG-HXY for High Power Solar Inverter EV Charger and UPS

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Product Detail
Td(off) :
216ns
Pd - Power Dissipation :
600W
Td(on) :
55ns
Collector-Emitter Breakdown Voltage (Vces) :
1.2kV
Reverse Transfer Capacitance (Cres) :
42pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
5.1V@250uA
Contact Supplier
1200V 50A IGBT Transistor HXY MOSFET APT50GF120B2RG-HXY for High Power Solar Inverter EV Charger and UPS

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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