MachineU > China Products
Durable power transistor HXY MOSFET IRGP4063DPBF-HXY for boost converters and portable power stations
Durable power transistor HXY MOSFET IRGP4063DPBF-HXY for boost converters and portable power stations
Specifications
Td(off) :
122ns
Pd - Power Dissipation :
300W
Td(on) :
24ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
92pF
IGBT Type :
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
4.5V@1mA
Gate Charge(Qg) :
179nC@15V
Reverse Recovery Time(trr) :
98ns
Switching Energy(Eoff) :
1.14mJ
Turn-On Energy (Eon) :
1.38mJ
Input Capacitance(Cies) :
3.363nF
Pulsed Current- Forward(Ifm) :
200A
Output Capacitance(Coes) :
206pF
Description :
300W 650V FS (Field Stop) TO-247 Single IGBTs RoHS
Mfr. Part # :
IRGP4063DPBF-HXY
Model Number :
IRGP4063DPBF-HXY
Package :
TO-247
Description

Product Overview

The IRGP4063DPBF is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications such as UPS, motor drives, boost converters, and portable power stations, offering features like a positive temperature coefficient, fast switching, low VCE(sat), and a reliable, rugged construction. Halogen-free and green device options are available, compliant with RoHS standards.

Product Attributes

  • Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
  • Model: IRGP4063DPBF
  • Package Type: TO-247
  • Certifications: Halogen Free, Green Devices Available, RoHS Compliant
  • Origin: Shenzhen HuaXuanYang Electronics CO.,LTD

Technical Specifications

ParameterValueUnitDescription
VCES650VCollector-Emitter Voltage
IC @TC=25C100ACollector Current
IC @TC=100C50ACollector Current
ICM200APulsed Collector Current, tp limited by TJmax
VCE(sat).typ1.65VCollector-Emitter Saturation Voltage (typ.)
VGE(TH)4.5 - 6.5VGate Threshold Voltage
PD @TC=25C300WPower Dissipation
TJmax, Tstg-55 to 175Operating Junction and Storage Temperature Range
RJC (IGBT)0.50/WJunction-to-Case Thermal Resistance (IGBT)
RJA40/WJunction-to-Ambient Thermal Resistance
Cies3363pFInput Capacitance
Coes206pFOutput Capacitance
Cres92pFReverse Transfer Capacitance
Qg179nCGate Charge
td(on) @TJ=25C24nsTurn-on Delay Time
tr @TJ=25C86nsRise Time
td(off) @TJ=25C122nsTurn-Off Delay Time
tf @TJ=25C74nsFall Time
Eon @TJ=25C1.38mJTurn-On Switching Loss
Eoff @TJ=25C1.14mJTurn-Off Switching Loss
Ets @TJ=25C2.52mJTotal Switching Loss

2509181737_HXY-MOSFET-IRGP4063DPBF-HXY_C49003310.pdf

Send your message to this supplier
Send Now

Durable power transistor HXY MOSFET IRGP4063DPBF-HXY for boost converters and portable power stations

Ask Latest Price
Product Detail
Td(off) :
122ns
Pd - Power Dissipation :
300W
Td(on) :
24ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
92pF
IGBT Type :
FS (Field Stop)
Contact Supplier
Durable power transistor HXY MOSFET IRGP4063DPBF-HXY for boost converters and portable power stations

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Single IGBTs
MachineU China Products
Contact Supplier
Submit Requirement