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Power Semiconductor Fuji Electric FGW50XS65D Discrete IGBT for PV Power Conditioners and UPS Systems
Power Semiconductor Fuji Electric FGW50XS65D Discrete IGBT for PV Power Conditioners and UPS Systems
Specifications
Description :
TO-247 Single IGBTs RoHS
Mfr. Part # :
FGW50XS65D
Model Number :
FGW50XS65D
Package :
TO-247
Description

Fuji Electric FGW50XS65D Discrete IGBT

The Fuji Electric FGW50XS65D is a Discrete IGBT from the XS-series, designed for high-efficiency power applications. It offers low power loss, reduced switching surge and noise, and high reliability. This IGBT is suitable for use in uninterruptible power supplies, PV power conditioners, and inverter welding machines.

Product Attributes

  • Brand: Fuji Electric
  • Series: XS-series
  • Package: TO-247-P/TO-247-P2

Technical Specifications

ParameterSymbolConditionsMin.Typ.Max.UnitRemarks
Absolute Maximum Ratings
Collector-Emitter VoltageVCES650V
Gate-Emitter VoltageVGES±20V
Transient Gate-Emitter Voltagetp < 1 µs±30V
DC Collector CurrentIC@25TC = 25 °C77A
DC Collector CurrentIC@100TC = 100 °C50A
Pulsed Collector CurrentICP200ANote *1
Turn-Off Safe Operating AreaVCE ≤ 650 V, Tvj ≤ 175 °C-200A
Diode Forward CurrentIF@2548A
Diode Forward CurrentIF@10030A
Diode Pulsed CurrentIFP200ANote *1
IGBT Max. Power DissipationPtot_IGBTTC = 25 °C290W
FWD Max. Power DissipationPtot_FWDTC = 25 °C131W
Operating Junction TemperatureTvj-40+175°C
Storage TemperatureTstg-55+175°C
Electrical Characteristics
Zero Gate Voltage Collector CurrentICESVCE = 650 V, VGE = 0 V, Tvj = 25 °C250µA
Zero Gate Voltage Collector CurrentICESVCE = 650 V, VGE = 0 V, Tvj = 175 °C2mA
Gate-Emitter Leakage CurrentIGESVCE = 0 V, VGE = ± 20 V200nA
Gate-Emitter Threshold VoltageVGE(th)VCE = 20 V, IC = 50 mA3.44.04.6V
Collector-Emitter Saturation VoltageVCE(sat)VGE = 15 V, IC = 50 A, Tvj = 25 °C1.351.70V
Collector-Emitter Saturation VoltageVCE(sat)VGE = 15 V, IC = 50 A, Tvj = 125 °C1.50-V
Collector-Emitter Saturation VoltageVCE(sat)VGE = 15 V, IC = 50 A, Tvj = 175 °C1.60-V
Input CapacitanceCiesVCE = 25 V, VGE = 0 V, f = 1 MHz4100-pF
Output CapacitanceCoes96-pF
Reverse Transfer CapacitanceCres42-pF
Gate ChargeQGVCC = 520 V, IC = 50 A, VGE = 15 V210-nC
Turn-On Delay Timetd(on)Tvj= 25 °C, VCC = 400 V, IC = 25 A, VGE = 15 V, RG = 10 Ω32-nsEnergy loss include “tail” and FWD reverse recovery.
Rise TimetrTvj= 25 °C, VCC = 400 V, IC = 25 A, VGE = 15 V, RG = 10 Ω34-ns
Turn-Off Delay Timetd(off)Tvj= 25 °C, VCC = 400 V, IC = 25 A, VGE = 15 V, RG = 10 Ω240-ns
Fall TimetfTvj= 25 °C, VCC = 400 V, IC = 25 A, VGE = 15 V, RG = 10 Ω20-ns
Turn-On EnergyEonTvj= 25 °C, VCC = 400 V, IC = 25 A, VGE = 15 V, RG = 10 Ω0.54-mJ
Turn-Off EnergyEoffTvj= 25 °C, VCC = 400 V, IC = 25 A, VGE = 15 V, RG = 10 Ω0.38-mJ
Turn-On Delay Timetd(on)Tvj = 150 °C, VCC = 400 V, IC = 25 A, VGE = 15 V, RG = 10 Ω32-nsEnergy loss include “tail” and FWD reverse recovery.
Rise TimetrTvj = 150 °C, VCC = 400 V, IC = 25 A, VGE = 15 V, RG = 10 Ω32-ns
Turn-Off Delay Timetd(off)Tvj = 150 °C, VCC = 400 V, IC = 25 A, VGE = 15 V, RG = 10 Ω280-ns
Fall TimetfTvj = 150 °C, VCC = 400 V, IC = 25 A, VGE = 15 V, RG = 10 Ω21-ns
Turn-On EnergyEonTvj = 150 °C, VCC = 400 V, IC = 25 A, VGE = 15 V, RG = 10 Ω0.66-mJ
Turn-Off EnergyEoffTvj = 150 °C, VCC = 400 V, IC = 25 A, VGE = 15 V, RG = 10 Ω0.50-mJ
Forward Voltage DropVFIF = 30 A, Tvj = 25 °C1.702.15V
Forward Voltage DropVFIF = 30 A, Tvj = 125 °C1.78-V
Forward Voltage DropVFIF = 30 A, Tvj = 175 °C1.78-V
Diode Reverse Recovery TimetrrVCC = 400 V, IF = 15 A, -diF/dt = 900 A/µs, Tvj = 25 °C62-ns
Diode Reverse Recovery ChargeQrrVCC = 400 V, IF = 15 A, -diF/dt = 900 A/µs, Tvj = 25 °C0.50-µC
Diode Reverse Recovery TimetrrVCC = 400 V, IF = 15 A, -diF/dt = 900 A/µs, Tvj = 150 °C100-ns
Diode Reverse Recovery ChargeQrrVCC = 400 V, IF = 15 A, -diF/dt = 900 A/µs, Tvj = 150 °C1.30-µC
Thermal Resistance
Thermal Resistance, Junction-AmbientRth(j-a)-50°C/W
Thermal Resistance, IGBT Junction to CaseRth(j-c)_IGBT-0.518°C/W
Thermal Resistance, FWD Junction to CaseRth(j-c)_FWD-1.148°C/W

2511211130_Fuji-Electric-FGW50XS65D_C36319066.pdf

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Power Semiconductor Fuji Electric FGW50XS65D Discrete IGBT for PV Power Conditioners and UPS Systems

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Product Detail
Description :
TO-247 Single IGBTs RoHS
Mfr. Part # :
FGW50XS65D
Model Number :
FGW50XS65D
Package :
TO-247
Contact Supplier
Power Semiconductor Fuji Electric FGW50XS65D Discrete IGBT for PV Power Conditioners and UPS Systems

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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