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Discrete IGBT Fuji Electric FGW75N65WE Suitable for Inverter Welding Machines and Power Conditioners
Discrete IGBT Fuji Electric FGW75N65WE Suitable for Inverter Welding Machines and Power Conditioners
Specifications
Pd - Power Dissipation :
520W
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
120pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
3V@75mA
Gate Charge(Qg) :
300nC@520V
Operating Temperature :
-40℃~+175℃
Pulsed Current- Forward(Ifm) :
300A
Output Capacitance(Coes) :
150pF
Reverse Recovery Time(trr) :
180ns
Switching Energy(Eoff) :
1.2mJ
Turn-On Energy (Eon) :
950uJ
Description :
520W 650V TO-247 Single IGBTs RoHS
Mfr. Part # :
FGW75N65WE
Model Number :
FGW75N65WE
Package :
TO-247
Description

Product Overview

The FGW75N65WE is a high-speed Discrete IGBT from Fuji Electric's W series, designed for applications requiring low power loss and high reliability. It features low switching surge and noise, with excellent ruggedness (RBSOA, SCSOA). Ideal for Uninterruptible Power Supplies, PV Power Conditioners, and Inverter Welding Machines.

Product Attributes

  • Brand: Fuji Electric
  • Series: W Series
  • Product Type: Discrete IGBT
  • Date: January 2018
  • Website: http://www.fujielectric.com/products/semiconductor/

Technical Specifications

ItemSymbolConditionsmin.typ.max.UnitRemarks
Absolute Maximum Ratings
Collector-Emitter VoltageVCES650V
Gate-Emitter VoltageVGES±20V
Transient Gate-Emitter VoltageTp<1µs±30V
DC Collector CurrentIC@25°CTC=25°C124A
DC Collector CurrentIC@100°CTC=100°C75A
Pulsed Collector CurrentICP300ANote *1
Turn-Off Safe Operating AreaVCE≤650V Tj≤175°C300A
Diode Forward CurrentIF@25°C111A
Diode Forward CurrentIF@100°C75A
Diode Pulsed CurrentIFP300ANote *1
IGBT Max. Power DissipationPD_IGBTTC=25°C520W
FWD Max. Power DissipationPD_FWDTC=25°C260W
Operating Junction TemperatureTj-40+175°C
Storage TemperatureTstg-55+175°C
Electrical Characteristics
Zero Gate Voltage Collector CurrentICESVCE = 650V, VGE = 0V Tj=25°C250µA
Zero Gate Voltage Collector CurrentICESVCE = 650V, VGE = 0V Tj=175°C2mA
Gate-Emitter Leakage CurrentIGESVCE = 0V, VGE = ±20V200nA
Gate-Emitter Threshold VoltageVGE (th)VCE = 20V, IC = 75mA3.04.05.0V
Collector-Emitter Saturation VoltageVCE (sat)VGE = 15V, IC = 75A Tj=25°C1.802.20V
Collector-Emitter Saturation VoltageVCE (sat)VGE = 15V, IC = 75A Tj=125°C2.05-V
Collector-Emitter Saturation VoltageVCE (sat)VGE = 15V, IC = 75A Tj=175°C2.10-V
Input CapacitanceCiesVCE=25V VGE=0V f=1MHz5300-pF
Output CapacitanceCoes150-pF
Reverse Transfer CapacitanceCres120-pF
Gate ChargeQGVCC = 520V IC = 75A VGE = 15V300-nC
Turn-On Delay Timetd(on)Tj = 25°C, VCC = 400V IC = 37.5A, VGE = 15V RG = 10Ω34-nsEnergy loss include “tail” and FWD reverse recovery.
Rise TimetrTj = 25°C, VCC = 400V IC = 37.5A, VGE = 15V RG = 10Ω56-ns
Turn-Off Delay Timetd(off)Tj = 25°C, VCC = 400V IC = 37.5A, VGE = 15V RG = 10Ω300-ns
Fall TimetfTj = 25°C, VCC = 400V IC = 37.5A, VGE = 15V RG = 10Ω110-ns
Turn-On EnergyEonTj = 25°C, VCC = 400V IC = 37.5A, VGE = 15V RG = 10Ω0.95-mJ
Turn-Off EnergyEoffTj = 25°C, VCC = 400V IC = 37.5A, VGE = 15V RG = 10Ω1.2-mJ
Turn-On Delay Timetd(on)Tj = 150°C, VCC = 400V IC = 37.5A, VGE = 15V RG = 10Ω34-nsEnergy loss include “tail” and FWD reverse recovery.
Rise TimetrTj = 150°C, VCC = 400V IC = 37.5A, VGE = 15V RG = 10Ω56-ns
Turn-Off Delay Timetd(off)Tj = 150°C, VCC = 400V IC = 37.5A, VGE = 15V RG = 10Ω340-ns
Fall TimetfTj = 150°C, VCC = 400V IC = 37.5A, VGE = 15V RG = 10Ω94-ns
Turn-On EnergyEonTj = 150°C, VCC = 400V IC = 37.5A, VGE = 15V RG = 10Ω1.6-mJ
Turn-Off EnergyEoffTj = 150°C, VCC = 400V IC = 37.5A, VGE = 15V RG = 10Ω1.2-mJ
Forward Voltage DropVFIF=75A Tj=25°C2.53.2V
Forward Voltage DropVFIF=75A Tj=125°C1.9-V
Forward Voltage DropVFIF=75A Tj=175°C1.7-V
Diode Reverse Recovery TimetrrVCC=400V, IF=37.5A -diF/dt=300A, Tj=25°C180-ns
Diode Reverse Recovery ChargeQrrVCC=400V, IF=37.5A -diF/dt=300A, Tj=25°C0.41-µC
Diode Reverse Recovery TimetrrVCC=400V, IF=37.5A -diF/dt=300A, Tj=150°C190-ns
Diode Reverse Recovery ChargeQrrVCC=400V, IF=37.5A -diF/dt=300A, Tj=150°C1.50-µC
Thermal Resistance
Thermal Resistance, Junction-AmbientRth(j-a)50°C/W
Thermal Resistance, IGBT Junction to CaseRth(j-c)_IGBT0.286°C/W
Thermal Resistance, FWD Junction to CaseRth(j-c)_FWD0.568°C/W

2410251400_Fuji-Electric-FGW75N65WE_C31630721.pdf

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Discrete IGBT Fuji Electric FGW75N65WE Suitable for Inverter Welding Machines and Power Conditioners

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Product Detail
Pd - Power Dissipation :
520W
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
120pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
3V@75mA
Gate Charge(Qg) :
300nC@520V
Operating Temperature :
-40℃~+175℃
Contact Supplier
Discrete IGBT Fuji Electric FGW75N65WE Suitable for Inverter Welding Machines and Power Conditioners

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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