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Power transistor JIAENSEMI JNG30T65FJS1 650V 30A insulated gate bipolar transistor for motor control
Power transistor JIAENSEMI JNG30T65FJS1 650V 30A insulated gate bipolar transistor for motor control
Specifications
Pd - Power Dissipation :
50W
Td(off) :
151ns
Td(on) :
30ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
23pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
5.2V@1mA
Operating Temperature :
-40℃~+175℃
Gate Charge(Qg) :
103nC@15V
Reverse Recovery Time(trr) :
105ns
Switching Energy(Eoff) :
600uJ
Turn-On Energy (Eon) :
950uJ
Input Capacitance(Cies) :
1.978nF
Pulsed Current- Forward(Ifm) :
80A
Output Capacitance(Coes) :
100pF
Description :
50W 650V TO-247 Single IGBTs RoHS
Mfr. Part # :
JNG30T65FJS1
Model Number :
JNG30T65FJS1
Package :
TO-247
Description

JNG30T65FJS1 IGBT

The JNG30T65FJS1 is a 650V, 30A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency motor control and general inverter applications. It offers high ruggedness performance with a 10s short circuit capability and excellent current sharing for parallel operation. Key features include a typical VCE(sat) of 1.7V at VGE=15V and IC=30A, making it suitable for demanding home appliance and motor drive systems.

Product Attributes

  • Brand: JIAEN Semiconductor Co., Ltd
  • Model: JNG30T65FJS1

Technical Specifications

Parameter Value Units Conditions
Absolute Maximum Ratings
Collector-Emitter Voltage (VCES) 650 V
Gate-Emitter Voltage (VGES) +20 V
Continuous Collector Current (IC) 60 A (TC=25 )
Continuous Collector Current (IC) 30 A (TC=100)
Pulsed Collector Current (ICM) 120 A (Note 1)
Diode Continuous Forward Current (IF) 30 A (TC=100 )
Diode Maximum Forward Current (IFM) 80 A (Note 1)
Short Circuit Withstand Time (tsc) 10 s
Maximum Power Dissipation (PD) 50 W (TC=25 )
Maximum Power Dissipation (PD) 25 W (TC=100)
Operating Junction Temperature Range (TJ) -40 to +175
Storage Temperature Range (TSTG) -55 to +150
Thermal Characteristics
Thermal Resistance, Junction to case (Rth j-c) for IGBT 3.0 / W
Thermal Resistance, Junction to case (Rth j-c) for Diode 4.5 / W
Thermal Resistance, Junction to Ambient (Rth j-a) 50 / W
Electrical Characteristics (TC=25 unless otherwise noted)
Collector-Emitter Breakdown Voltage (BVCES) 650 V VGE= 0V, IC= 250uA
Collector-Emitter Leakage Current (ICES) 50 uA VCE= 650V, VGE= 0V
Gate Leakage Current, Forward (IGES) 100 nA VGE=20V, VCE= 0V
Gate Threshold Voltage (VGE(th)) 5.2 - 6.0 V VGE= VCE, IC=1mA
Collector-Emitter Saturation Voltage (VCE(sat)) 1.7 V VGE=15V, IC= 30A
Total Gate Charge (Qg) 103 nC VCC=520V, VGE=15V, IC=30A
Turn-on Delay Time (td(on)) 30 ns VCC=400V, VGE=15V, IC=30A, RG=10, Inductive Load, TC=25
Turn-on Rise Time (tr) 39 ns
Turn-off Delay Time (td(off)) 151 ns
Turn-off Fall Time (tf) 29 ns
Turn-on Switching Loss (Eon) 0.95 mJ
Turn-off Switching Loss (Eoff) 0.60 mJ
Total Switching Loss (Ets) 1.55 mJ
Input Capacitance (Cies) 1978 pF VCE=30V, VGE=0V, f = 1MHz
Output Capacitance (Coes) 100 pF
Reverse Transfer Capacitance (Cres) 23 pF
Electrical Characteristics of Diode (TC=25 unless otherwise noted)
Diode Forward Voltage (VF) 1.4 V IF=30A
Diode Reverse Recovery Time (trr) 105 ns VCE = 400V, IF = 30A, dif/dt = 550A/us
Diode peak Reverse Recovery Current (IRR) 16 A
Diode Reverse Recovery Charge (Qrr) 876 nC

Note 1: Repetitive Rating: Pulse width limited by maximum junction temperature.


2509021810_JIAENSEMI-JNG30T65FJS1_C51484254.pdf

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Power transistor JIAENSEMI JNG30T65FJS1 650V 30A insulated gate bipolar transistor for motor control

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Product Detail
Pd - Power Dissipation :
50W
Td(off) :
151ns
Td(on) :
30ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
23pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
5.2V@1mA
Contact Supplier
Power transistor JIAENSEMI JNG30T65FJS1 650V 30A insulated gate bipolar transistor for motor control

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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