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1200 Volt Insulated Gate Bipolar Transistor HXY MOSFET APT40GR120B-HXY for Energy Conversion Systems
1200 Volt Insulated Gate Bipolar Transistor HXY MOSFET APT40GR120B-HXY for Energy Conversion Systems
Specifications
Td(off) :
195ns
Pd - Power Dissipation :
417W
Td(on) :
48ns
Collector-Emitter Breakdown Voltage (Vces) :
1.2kV
Reverse Transfer Capacitance (Cres) :
35pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
5.1V@250uA
Gate Charge(Qg) :
170nC@15V
Operating Temperature :
-40℃~+175℃
Reverse Recovery Time(trr) :
375ns
Switching Energy(Eoff) :
1.6mJ
Turn-On Energy (Eon) :
2.65mJ
Input Capacitance(Cies) :
5.047nF
Pulsed Current- Forward(Ifm) :
160A
Output Capacitance(Coes) :
161pF
Description :
417W 1.2kV TO-247 Single IGBTs RoHS
Mfr. Part # :
APT40GR120B-HXY
Model Number :
APT40GR120B-HXY
Package :
TO-247
Description

APT40GR120B Insulated Gate Bipolar Transistor

The APT40GR120B is an Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key applications include UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.

Product Attributes

  • Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
  • Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
  • Model: APT40GR120B
  • Package: TO-247
  • Packing: 30PCS

Technical Specifications

ParameterSymbolConditionsMin.Typ.Max.Unit
Absolute Maximum Ratings
Collector emitter voltageVCE1200V
DC collector currentICTC = 25C80A
DC collector currentICTC = 100C40A
Pulsed collector currentICMTC = 25C160A
Maximum Diode forward currentIFTC = 25C80A
Maximum Diode forward currentIFTC = 100C40A
Diode pulsed currentIFMTC = 25C160A
Gate-Emitter voltageVGETVJ = 25C20V
Transient Gate-Emitter Voltage(tp 10s, D < 0.010) TVJ = 25C30V
Power DissipationPtotTC = 25C417W
Power DissipationPtotTC = 100C208W
Operating Junction Temperature RangeTVJ-40+175C
Storage Temperature RangeTSTG-55+150C
Thermal Resistance
Thermal resistance: junction - case IGBTRJCIGBT0.36C/W
Thermal resistance: junction - case DiodeRJCDiode0.45C/W
Electrical Characteristics
Collector - Emitter Breakdown VoltageV(BR)CESVGE = 0V , IC = 0.5mA1200--V
Collector - Emitter Saturation VoltageVCESATVGE = 15V , IC = 40A ,TVJ = 25C1.61.92.3V
Collector - Emitter Saturation VoltageVCESATVGE = 15V , IC = 40A ,TVJ = 175C-2.9-V
Diode forward voltageVFVGE = 0V , IC = 40A ,TVJ = 25C-2.5-V
Diode forward voltageVFVGE = 0V , IC = 40A ,TVJ = 175C-1.8-V
Gate-Emitter threshold voltageVGE(th)VGE = VCE, IC = 250mA5.15.86.5V
Zero Gate voltage Collector currentICESVCE = 650V , VGE = 0V--250.0mA
Gate-Emitter leakage currentIGESVGE = 20V , VCE = 0V--100nA
TransconductancegfsVGE = 20V, IC = 40A-28-S
Dynamic Characteristics
Input CapacitanceCiesVGE = 0V, VCE = 25V, f = 1MHz-5047-pF
Output CapacitanceCoes-161-pF
Reverse Transfer CapacitanceCres-35-pF
Gate ChargeQgVGE = 0 to 15V VCE = 960V, IC = 40A-170-nC
Gate to Emitter chargeQge-37.5-nC
Gate to Collector chargeQgc-68-nC
Switching Characteristics
Turn-On Delay Timetd(on)VGE = 15V, VCC = 600V IC=40A, RG(off) = 12-48-ns
Turn-On Rise Timetr-50-ns
Turn-Off Delay Timetd(off)-195-ns
Turn-Off Fall Timetf-100-ns
Turn-on energyEon-2.65-mJ
Turn-off energyEoff-1.6-mJ
Total switching energyEts-4.25-mJ
Diode Recovery Characteristics
Reverse recovery timeTrrVR = 600 V, IF = 40 A, di/dt = 600 A/S-375-ns
Reverse recovery chargeQrr-2.29-mC
Peak reverse recovery currentIrrm-15-A

2509181738_HXY-MOSFET-APT40GR120B-HXY_C49003445.pdf

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1200 Volt Insulated Gate Bipolar Transistor HXY MOSFET APT40GR120B-HXY for Energy Conversion Systems

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Product Detail
Td(off) :
195ns
Pd - Power Dissipation :
417W
Td(on) :
48ns
Collector-Emitter Breakdown Voltage (Vces) :
1.2kV
Reverse Transfer Capacitance (Cres) :
35pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
5.1V@250uA
Contact Supplier
1200 Volt Insulated Gate Bipolar Transistor HXY MOSFET APT40GR120B-HXY for Energy Conversion Systems

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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