Specifications
Td(off) :
762ns
Pd - Power Dissipation :
694W
Td(on) :
188ns
Collector-Emitter Breakdown Voltage (Vces) :
1.2kV
Reverse Transfer Capacitance (Cres) :
17pF
Input Capacitance(Cies) :
9.86nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
4V@250uA
Operating Temperature :
-55℃~+150℃
Pulsed Current- Forward(Ifm) :
225A
Output Capacitance(Coes) :
281pF
Reverse Recovery Time(trr) :
580ns
Switching Energy(Eoff) :
6.8mJ
Turn-On Energy (Eon) :
11.7mJ
Description :
694W 1.2kV TO-247-3LPlus Single IGBTs RoHS
Mfr. Part # :
JNG75T120QCS2
Model Number :
JNG75T120QCS2
Package :
TO-247-3LPlus
Description

Product Overview

JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and square RBSOA.

Product Attributes

  • Brand: JIAEN
  • Origin: www.jiaensemi.com

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Units
Absolute Maximum RatingsVCESCollector-Emitter Voltage1200V
VGESGate-Emitter Voltage+ 30V
ICContinuous Collector Current ( TC=25 )150A
ICContinuous Collector Current ( TC=100)75A
ICMPulsed Collector Current (Note 1)225A
IFDiode Continuous Forward Current ( TC=100 )75A
IFMDiode Maximum Forward Current (Note 1)225A
tscShort Circuit Withstand Time10us
PDMaximum Power Dissipation ( TC=25 )694W
PDMaximum Power Dissipation ( TC=100)278W
Thermal CharacteristicsRth j-cThermal Resistance, Junction to case for IGBT0.18/ W
Rth j-cThermal Resistance, Junction to case for Diode0.5/ W
Rth j-aThermal Resistance, Junction to Ambient40/ W
TJOperating Junction Temperature Range-55+150
TSTGStorage Temperature Range-55+150
Electrical Characteristics (TC=25 unless otherwise noted )BVCESCollector-Emitter Breakdown Voltage VGE= 0V, IC= 250uA1200--V
ICESCollector-Emitter Leakage Current VCE= 1200V, VGE= 0V-100uA
IGESGate Leakage Current, Forward VGE= + 30V, VCE= 0V-+ 100nA
VGE(th)Gate Threshold Voltage VGE= VCE, IC= 250uA4.0-7.0V
VCE(sat)Collector-Emitter Saturation Voltage VGE=15V, IC= 75A1.652.3V
QgTotal Gate Charge VCC=960V VGE=15V IC=75A472nC
QgeGate-Emitter Charge118nC
QgcGate-Collector Charge251nC
td(on)Turn-on Delay Time VCC=600V VGE=15V IC=75A RG=15 Inductive Load TC=25 188-ns
trTurn-on Rise Time115-ns
td(off)Turn-off Delay Time762-ns
tfTurn-off Fall Time137-ns
EonTurn-on Switching Loss11.7-mJ
EoffTurn-off Switching Loss6.8-mJ
EtsTotal Switching Loss18.5-mJ
CiesInput Capacitance VCE=25V VGE=0V f = 1MHz9860-pF
CoesOutput Capacitance281-pF
CresReverse Transfer Capacitance17-pF
Electrical Characteristics of Diode (TC=25 unless otherwise noted )VFDiode Forward Voltage IF=75A1.853.0V
trrDiode Reverse Recovery Time VCE = 600V IF= 75A dIF/dt = 700A/us580ns
IRRDiode peak Reverse Recovery Current31.3A
Qr rDiode Reverse Recovery Charge1250nC

2509021810_JIAENSEMI-JNG75T120QCS2_C51484278.pdf

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IGBT JIAENSEMI JNG75T120QCS2 Featuring 225 Amp Pulsed Collector Current and Short Circuit Withstand

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Td(off) :
762ns
Pd - Power Dissipation :
694W
Td(on) :
188ns
Collector-Emitter Breakdown Voltage (Vces) :
1.2kV
Reverse Transfer Capacitance (Cres) :
17pF
Input Capacitance(Cies) :
9.86nF
Contact Supplier
IGBT JIAENSEMI JNG75T120QCS2 Featuring 225 Amp Pulsed Collector Current and Short Circuit Withstand

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier

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