Product Overview
The DT1T Series TRIACs are sensitive gate, silicon bidirectional thyristors designed for third quadrant applications. Available in TO-92 and SOT-223 packages, these TRIACs offer high commutation performance without the need for a snubber circuit and can be triggered by logic-level inputs. They are suitable for general purpose motor control, small loads in fan control, solenoid drivers, LED dimming, and digital control drivers.
Key Features
Applications
| Parameter | Symbol | DT1T5X | DT1T10X | Unit | Notes |
|---|---|---|---|---|---|
| Absolute Ratings | |||||
| Peak repetitive off-state voltage | VDRM / VRRM | 1000 / 800 | V | (Tj = -40 to 125C, Full sine wave, 50 to 60 Hz; Gate open) | |
| On-stage RMS current | IT(RMS) | 1 | A | (Full sine wave, TC = 60C) | |
| Peak non-repetitive surge current | ITSM | 9 | A | (one full cycle 60 HZ, Tj = 25C) | |
| Circuit fusing consideration | I2T | 0.6 | AS | (t = 8.3ms) | |
| Operating junction temperature range | Tj | -40 to +125 | C | ||
| Storage temperature range | TSTG | -40 to +150 | C | ||
| Thermal Characteristics | |||||
| Thermal resistance from junction to lead (1) | Rth(j-c) | Max 50 (TO-92) | C/W | ||
| Thermal resistance from junction to lead (1) | Rth(j-c) | Max 20 (SOT-223) | C/W | ||
| Junction to ambient (DC) (1) | Rth(j-L) | Max 50 (TO-92) | C/W | ||
| Junction to ambient (DC) (1) | Rth(j-L) | Max 25 (SOT-223) | C/W | ||
| Maximum lead temperature for soldering purposes | TL | 260 | C | (1/8 form case for 10 seconds) | |
| Static Characteristics | |||||
| Threshold Voltage | Vto | -- | 1.1 | V | (Tj = 125C) |
| Dynamic resistors | Rd | -- | 500 | m | (Tj = 125C) |
| Peak repetitive forward or reverse blocking current | IDRM / IRRM | -- | 5 (Tj=25C) / 0.5 (Tj=125C) | uA / mA | (VAK = rated VDRM and VRRM, gate open) |
| ON Characteristics | |||||
| Peak forward on-state voltage | VTM | 1.56 | -- | V | (ITM = 1.4 A @ Tj = 25C) |
| Gate trigger voltage | VGT1 / VGT2 / VGT3 | 1 | 1 | V | (VAK = 12V, RL=100) |
| Gate trigger current | IGT1 / IGT2 / IGT3 | 5 / 5 / 5 | 10 / 10 / 10 | mA | (VAK = 12V, RL=100) |
| Holding current | IH1 / IH3 | 5 | 10 | mA | (VAK = 12V, RL=100) |
| Latching current | IL1 / IL2 / IL3 | 10 / 20 / 25 | 25 / 25 / 25 | mA | (VAK = 12V, RL=100) |
| Dynamic Characteristics | |||||
| Critical rate of rise of off-stage voltage | dv/dt | 200 | 600 | V/us | (VAK = 67% rated VDRM , Tj = 125C, gate open) |
| Critical rate of rise of on-state current | di/dt(s) | 15 | 50 | A/us | (VDRM=maximum VDRM ,Tj = 125C) |
| Critical rate of rise of on-state current | di/dt(c) | 0.3 | 1 | A/ms | (Tj=125C, gate open, Without Snubber) |
| DIM | Min | Max | DIM | Min | Max | DIM | Min | Max | |
|---|---|---|---|---|---|---|---|---|---|
| A | 6.40 | 6.60 | c2 | 0.2 | 0.35 | L | 0.76 | 1.16 | |
| B | 3.40 | 3.60 | b | 0.66 | 0.76 | L1 | 1.70 | 1.80 | |
| C | 1.45 | 1.65 | B1 | 6.85 | 7.15 | 0 | 8 | ||
| C1 | 0.03 | 0.15 | e | 2.286(BSC) | |||||
| DIM | Inches | Millimeters | DIM | Inches | Millimeters | DIM | Inches | Millimeters | |
|---|---|---|---|---|---|---|---|---|---|
| Min | Max | Min | Max | Min | Max | Min | Max | ||
| A | 0.175 | 0.205 | 4.45 | 5.20 | E | 0.095 | 0.105 | 2.413 | 2.667 |
| B | 0.170 | 0.210 | 4.32 | 5.33 | F | 0.500 | 12.70 | ||
| C | 0.125 | 0.165 | 3.175 | 4.191 | G | 0.080 | 0.105 | 2.04 | 2.66 |
| D | 0.045 | 0.055 | 1.143 | 1.397 | H | 0.135 | 3.43 |
Type Code: Doeshare Standar products
Product Code: T for Triac series
IT Amp Code: 1 for 1A
Quadrantal Code: T for 3Q
IGT&VCEsat Code: 5 means Igt 5mA
Package Code: A=>TO-92, G=>SOT-223
Voltage Code: B=> 800V, C=> 1000V
Operation Temp Code: None=>125C