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TOSHIBA GT30N135SRA S1E Discrete IGBT Designed for Soft Switching Applications and Induction Cooktop
TOSHIBA GT30N135SRA S1E Discrete IGBT Designed for Soft Switching Applications and Induction Cooktop
TOSHIBA GT30N135SRA S1E Discrete IGBT Designed for Soft Switching Applications and Induction Cooktop
TOSHIBA GT30N135SRA S1E Discrete IGBT Designed for Soft Switching Applications and Induction Cooktop
TOSHIBA GT30N135SRA S1E Discrete IGBT Designed for Soft Switching Applications and Induction Cooktop
TOSHIBA GT30N135SRA S1E Discrete IGBT Designed for Soft Switching Applications and Induction Cooktop
Specifications
Td(off) :
-
Pd - Power Dissipation :
348W
Operating Temperature :
-
Td(on) :
-
Collector-Emitter Breakdown Voltage (Vces) :
1.35kV
IGBT Type :
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
-
Gate Charge(Qg) :
270nC
Switching Energy(Eoff) :
1.3mJ
Turn-On Energy (Eon) :
-
Description :
348W 1.35kV TO-247 Single IGBTs RoHS
Mfr. Part # :
GT30N135SRA,S1E
Model Number :
GT30N135SRA,S1E
Package :
TO-247
Description

Product Overview

The GT30N135SRA is a discrete Silicon N-Channel IGBT designed for voltage-resonant inverter switching, soft switching applications, and induction cooktops and home appliances. This 6.5th generation RC-IGBT integrates a freewheeling diode (FWD) monolithically. It offers high-speed switching with a typical IGBT fall time of 0.25 s and a low saturation voltage of 1.65 V (typ.). The device supports a high junction temperature of 175 C (max) and is sensitive to electrostatic discharge.

Product Attributes

  • Brand: Toshiba
  • Product Type: Discrete IGBT
  • Channel Type: N-Channel
  • Generation: 6.5th generation
  • Certifications: RoHS Compatible

Technical Specifications

CharacteristicsSymbolRatingUnitTest Condition
Absolute Maximum Ratings
Collector-emitter voltageVCES1350V(Tc = 25 )
Gate-emitter voltageVGES25V
Collector current (DC)IC60A(Tc = 100 )
Collector current (1 ms)ICP120A(Tc = 25 )
Non-repetitive peak collector currentICSM260A(Tc = 100 )
Diode forward current (DC)IF60A(Note 2) (Tc = 25 )
Diode forward current (100 s)IFP120A(Note 2) (Tc = 100 )
Collector power dissipationPC348W(Note 1)
Junction temperatureTj175 (max)
Storage temperatureTstg-55 to 175
Mounting torqueTOR0.8N m
Thermal Characteristics
Junction-to-case thermal resistanceRth(j-c)0.43/W
Static Characteristics
Gate leakage currentIGES100nAVGE = 25 V, VCE = 0 V
Collector cut-off currentICES100AVCE = 1350 V, VGE = 0 V
Collector-emitter breakdown voltageV(BR)CES1350VIC = 0.5 mA, VGE = 0 V
Gate-emitter cut-off voltageVGE(OFF)5.3VIC = 60 mA, VCE = 5 V
Collector-emitter saturation voltageVCE(sat)(1)1.65VIC = 30 A, VGE = 15 V (pulse test)
Collector-emitter saturation voltageVCE(sat)(2)1.90VIC = 30 A, VGE = 15 V, Tc = 125 (pulse test)
Collector-emitter saturation voltageVCE(sat)(3)2.15VIC = 60 A, VGE = 15 V (pulse test)
Collector-emitter saturation voltageVCE(sat)(4)2.60VIC = 60 A, VGE = 15 V, Tc = 125 (pulse test)
Diode forward voltageVF(1)1.75VIF = 30 A, VGE = 0 V (pulse test)
Diode forward voltageVF(2)1.85VIF = 30 A, VGE = 0 V, Tc = 125 (pulse test)
Dynamic Characteristics
Input capacitanceCies3700pFVCE = 25 V, VGE = 0 V, f = 100 kHz
Reverse transfer capacitanceCres40pFVCE = 25 V, VGE = 0 V, f = 100 kHz
Output capacitanceCoes55pFVCE = 25 V, VGE = 0 V, f = 100 kHz
Total gate chargeQg270nCVCE = 600 V, IC = 60 A, VGE = 15 V
Switching time (rise time)tr0.14sResistive load
Switching time (turn-on time)ton0.21sResistive load
Switching time (fall time)tf0.25sVCE = 600 V, IC = 60 A, VGE = +15 V, RG = 10
Switching time (turn-off time)toff0.50sVCE = 600 V, IC = 60 A, VGE = +15 V, RG = 10
Switching loss (turn-off switching loss)Eoff(1)0.80mJInductive load VCE = 300 V, IC = 60 A, VGE = +15 V, RG = 39 , L = 30 H, C = 0.33 F
Switching loss (turn-off switching loss)Eoff(2)1.30mJTc = 125 Inductive load VCE = 300 V, IC = 60 A, VGE = +15 V, RG = 39 , L = 30 H, C = 0.33 F

2310271851_TOSHIBA-GT30N135SRA-S1E_C17181813.pdf

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TOSHIBA GT30N135SRA S1E Discrete IGBT Designed for Soft Switching Applications and Induction Cooktop

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Product Detail
Td(off) :
-
Pd - Power Dissipation :
348W
Operating Temperature :
-
Td(on) :
-
Collector-Emitter Breakdown Voltage (Vces) :
1.35kV
IGBT Type :
-
Contact Supplier
TOSHIBA GT30N135SRA S1E Discrete IGBT Designed for Soft Switching Applications and Induction Cooktop
TOSHIBA GT30N135SRA S1E Discrete IGBT Designed for Soft Switching Applications and Induction Cooktop
TOSHIBA GT30N135SRA S1E Discrete IGBT Designed for Soft Switching Applications and Induction Cooktop

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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