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Silicon N Channel IGBT TOSHIBA GT40WR21Q Featuring Integrated Freewheeling Diode and RoHS Compliance
Silicon N Channel IGBT TOSHIBA GT40WR21Q Featuring Integrated Freewheeling Diode and RoHS Compliance
Silicon N Channel IGBT TOSHIBA GT40WR21Q Featuring Integrated Freewheeling Diode and RoHS Compliance
Silicon N Channel IGBT TOSHIBA GT40WR21Q Featuring Integrated Freewheeling Diode and RoHS Compliance
Silicon N Channel IGBT TOSHIBA GT40WR21Q Featuring Integrated Freewheeling Diode and RoHS Compliance
Silicon N Channel IGBT TOSHIBA GT40WR21Q Featuring Integrated Freewheeling Diode and RoHS Compliance
Specifications
Pd - Power Dissipation :
375W
Td(off) :
-
Operating Temperature :
-
Td(on) :
-
Collector-Emitter Breakdown Voltage (Vces) :
1.35kV
IGBT Type :
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
5.9V@15V,40A
Switching Energy(Eoff) :
-
Turn-On Energy (Eon) :
-
Description :
375W 1.35kV SC-65-3 Single IGBTs RoHS
Mfr. Part # :
GT40WR21,Q
Model Number :
GT40WR21,Q
Package :
SC-65-3
Description

Product Overview

The GT40WR21 is a silicon N-Channel IGBT designed for voltage-resonant inverter switching applications. It features 6.5th generation technology, a monolithic RC-IGBT with an integrated freewheeling diode, high-speed switching capabilities, low saturation voltage, and a high junction temperature rating. This product is dedicated to specific inverter applications and should not be used for other purposes.

Product Attributes

  • Brand: Toshiba
  • Product Type: Discrete IGBTs
  • Material: Silicon
  • Mode: Enhancement mode
  • Generation: 6.5th generation
  • Certifications: RoHS COMPATIBLE

Technical Specifications

CharacteristicsSymbolRatingUnitTest Condition
Absolute Maximum Ratings
Collector-emitter voltageVCES1800V(Ta = 25, unless otherwise specified)
Gate-emitter voltageVGES25V(Ta = 25, unless otherwise specified)
Collector current (DC)IC40A(Tc = 25)
Collector current (1 ms)ICP80A(Tc = 25)
Diode forward current (DC)IF20A(Tc = 25)
Diode forward current (100 s)IFP80A(Tc = 25)
Collector power dissipationPC375W(Tc = 25)
Junction temperatureTj175(max)
Storage temperatureTstg-55 to 175
Mounting torqueTOR0.8Nm(Note 1)
Thermal Characteristics
Junction-to-case thermal resistanceRth(j-c)0.40/WMax
Static Characteristics
Gate leakage currentIGES100nAVGE = 25 V, VCE = 0 V
Collector cut-off currentICES1mAVCE = 1800 V, VGE = 0 V
Gate-emitter cut-off voltageVGE(OFF)4.5 to 7.5VIC = 40 mA, VCE = 5 V
Collector-emitter saturation voltageVCE(sat)2.9VIC = 40 A, VGE = 15 V (typ.)
Diode forward voltageVF1.7 to 2.7VIF = 15 A, VGE = 0 V
Dynamic Characteristics
Input capacitanceCies4500pFVCE = 10 V, VGE = 0 V, f = 1 MHz (typ.)
Switching time (rise time)tr0.40sResistive load VCC = 600 V, IC = 40 A, VGG = 15 V, RG = 51 (typ.)
Switching time (turn-on time)ton0.55sResistive load VCC = 600 V, IC = 40 A, VGG = 15 V, RG = 51 (typ.)
Switching time (fall time)tf0.15sResistive load VCC = 600 V, IC = 40 A, VGG = 15 V, RG = 51 (typ.)
Switching time (turn-off time)toff0.42sResistive load VCC = 600 V, IC = 40 A, VGG = 15 V, RG = 51 (typ.)
Reverse recovery timetrr1.0sIF = 15 A, VGE = 0 V, di/dt = -20 A/s (typ.)

2504101957_TOSHIBA-GT40WR21-Q_C17673904.pdf

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Silicon N Channel IGBT TOSHIBA GT40WR21Q Featuring Integrated Freewheeling Diode and RoHS Compliance

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Product Detail
Pd - Power Dissipation :
375W
Td(off) :
-
Operating Temperature :
-
Td(on) :
-
Collector-Emitter Breakdown Voltage (Vces) :
1.35kV
IGBT Type :
-
Contact Supplier
Silicon N Channel IGBT TOSHIBA GT40WR21Q Featuring Integrated Freewheeling Diode and RoHS Compliance
Silicon N Channel IGBT TOSHIBA GT40WR21Q Featuring Integrated Freewheeling Diode and RoHS Compliance
Silicon N Channel IGBT TOSHIBA GT40WR21Q Featuring Integrated Freewheeling Diode and RoHS Compliance

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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