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Durable JSCJ CR812B 2.5-6MA SCR designed for high surge peak on state current applications up to 140A
Durable JSCJ CR812B 2.5-6MA SCR designed for high surge peak on state current applications up to 140A
Specifications
Holding Current (Ih) :
30mA
Current - Gate Trigger(Igt) :
25mA
Voltage - On State(Vtm) :
1.6V
Average Gate Power Dissipation (PG(AV)) :
1W
Current - On State(It(RMS)) :
12A
Peak off - state voltage(Vdrm) :
800V
Current - Surge(Itsm@f) :
140A
Gate Trigger Voltage (Vgt) :
1V
Operating Temperature :
-40℃~+125℃
Description :
800V 12A Through Hole TO-220
Mfr. Part # :
CR812B 2.5-6MA
Model Number :
CR812B 2.5-6MA
Package :
TO-220
Description

Product Overview

The CR812B is a standard SCR (Silicon Controlled Rectifier) from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It features a PNPN 4-layer structure, mesa glass passivated technology, and multi-layers metal electrodes. This SCR is designed for applications such as LED controllers, motorcycle voltage regulators, and hair straighteners.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Part Number: CR812B
  • Package Type: TO-220BK
  • Marking: CR812B (Part Number), XXX (Internal Code)

Technical Specifications

SymbolParameterTest ConditionValueUnit
VDRM/VRRMRepetitive peak off-state voltageTj=25800V
Tj=125800V
IT(RMS)RMS on-state currentTO-220BK(TC110)12A
IT(AV)Average on-state currentTO-220BK(TC110)8A
ITSMNon repetitive surge peak on-state currentFull sine wave, Tj(init)=25, tp=20ms; Fig. 3,5140A
I2tI2t valuetp=10ms98A2s
dIT/dtCritical rate of rise of on-state currentIG=2*IGT, tr10ns, F=120HZ, Tj=12550A/s
IGMPeak gate currenttp=20s, Tj=1254A
PG(AV)Average gate powerTj=1251W
VTMOn-state VoltageITM=24A, Fig. 41.6V
IGTGate trigger currentVD=12V, RL=33, Tj=25, Fig. 60.2mA
VGTGate trigger voltageIG=1.2IGT, Tj=251.0V
VGDNon-triggering gate voltageVD=VDRM, RL=3.3k, Tj=1250.2V
IHHolding currentIT=500mA, Tj=258mA
ILLatching currentVD=12V, RL=33, Tj=2510mA
dVD/dtCritical rate of rise of off-stateVD=67%VDRM, Gate OPEN,Tj=12530V/s
IDRM / IRRMRepetitive peak off- state currentVD=VDRM/VRRM, Tj=251mA
IDRM / IRRMRepetitive peak off- state currentVD=VDRM/VRRM, Tj=1255mA
TSTGStorage temperature-40~+150
TjOperating junction temperatureTO-220BK-40~+125
Rth(j-c)Junction to case (AC)1.3/W
Rth(j-a)Junction to ambient60/W

2410121538_JSCJ-CR812B-2-5-6MA_C527754.pdf

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Durable JSCJ CR812B 2.5-6MA SCR designed for high surge peak on state current applications up to 140A

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Product Detail
Holding Current (Ih) :
30mA
Current - Gate Trigger(Igt) :
25mA
Voltage - On State(Vtm) :
1.6V
Average Gate Power Dissipation (PG(AV)) :
1W
Current - On State(It(RMS)) :
12A
Peak off - state voltage(Vdrm) :
800V
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Durable JSCJ CR812B 2.5-6MA SCR designed for high surge peak on state current applications up to 140A

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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