Product Overview
The BT136-800E is a plastic-encapsulated thyristor designed for general-purpose switching applications. It offers a blocking voltage up to 800V and an RMS on-state current of up to 4A. This product is manufactured by Shenzhen HuaXuanYang Electronics CO.,LTD.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS
- Origin: Shenzhen, China
- Product ID: BT136-800E
- Package: TO-126
- Marking: BT136-800E
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Repetitive peak off-state voltage | VDRM /VRRM | | | | 800 | V |
| RMS on-state current | IT(RMS) | | | | 4 | A |
| Non repetitive surge peak on-state current | ITSM | t = 2ms, Tj =25C | | | 40 | A |
| Average Gate Power Dissipation | PG(AV) | | | | 0.5 | W |
| Junction Temperature | Tj | | -40 | | 125 | C |
| Storage Temperature | Tstg | | -40 | | 150 | C |
| Gate non-trigger voltage | VGD | VD= 1/2VDRM | | | 5 | V |
| On-state voltage | VTM | IT=4A,tp=380us | | | 1.65 | V |
| Gate trigger current | IGT | T2(+), G(+) VD=12V RL=100 | | | 12 | mA |
| Gate trigger voltage | VGT | T2(+), G(+) VD=12V RL=100 | | | 2.5 | V |
| Holding current | IH | VD=12V,IGT=100mA | | | 30 | mA |
| Repetitive Peak Off-State Current | IDRM,IRRM | VDRM=VRRM Tj =125C | | | 0.8 | mA |
| Rate of change of commutating voltage | dV/dt | Tj =125C | | | 20 | V/us |
| Turn-on time | tgt | ITM =16A ,VDM=VDRM Tj =125C | | | 2 | us |
| Critical-rate of rise of commutation current | (dl/dt)c | IG =0.1A,dlG/dt=5A/uS | | | 5.4 | A/ms |
| Symbol | Dimensions In Millimeters | Dimensions In Inches |
| A1 | 1.100 | 0.043 | 1.500 | 0.059 |
| b | 0.660 | 0.026 | 0.860 | 0.034 |
| b1 | 1.170 | 0.046 | 1.370 | 0.054 |
| c | 0.450 | 0.018 | 0.600 | 0.024 |
| D | 7.400 | 0.291 | 7.800 | 0.307 |
| E | 10.600 | 0.417 | 11.000 | 0.433 |
| e | 4.480 | 0.176 | 4.680 | 0.184 |
| h | 0.000 | 0.000 | 0.300 | 0.012 |
| L | 15.300 | 0.602 | 15.700 | 0.618 |
| L1 | 2.100 | 0.083 | 2.300 | 0.091 |
| P | 3.900 | 0.154 | 4.100 | 0.161 |
| 3.000 | 0.118 | 3.200 | 0.126 |
2508121550_HXY-MOSFET-BT136-800E_C50275364.pdf