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Durable HXY MOSFET BT134-800E triac featuring glass passivated technology and 800 volt repetitive peak voltage rating
Durable HXY MOSFET BT134-800E triac featuring glass passivated technology and 800 volt repetitive peak voltage rating
Specifications
Holding Current (Ih) :
30mA
Current - Gate Trigger(Igt) :
10mA
Voltage - On State(Vtm) :
1.65V
Average Gate Power Dissipation (PG(AV)) :
500mW
Current - On State(It(RMS)) :
4A
Peak off - state voltage(Vdrm) :
800V
Current - Surge(Itsm@f) :
20A
SCR Type :
1 TRIAC
Operating Temperature :
-40℃~+125℃
Gate Trigger Voltage (Vgt) :
2V
Description :
30mA 10mA 800V 1 TRIAC TO-126 TRIACs RoHS
Mfr. Part # :
BT134-800E
Model Number :
BT134-800E
Package :
TO-126
Description

Product Overview

The BT134-800E is a glass-passivated triac in a plastic encapsulation, designed for applications requiring high bidirectional transient and blocking voltage capability and excellent thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating, and static switching.

Product Attributes

  • Brand: HUAXUANYANG ELECTRONICS CO.,LTD
  • Origin: Shenzhen, China
  • Package: TO-126
  • Material: Plastic Encapsulate

Technical Specifications

SymbolParameterConditionsMinTypMaxUnit
Maximum Ratings
VDRM /VRRMrepetitive peak off-state voltage(Ta=25C unless otherwise noted)800V
IGMPeak Gate Current1A
VGMPeak gate voltage5V
PGMPeak gate power0.5W
TjJunction Temperature-40125C
G(AV)Average Gate Power Dissipation
IT(RMS)RMS on-state current4A
ITSMNon repetitive surge peak on-state currentt = 2ms T j =25 C20A
I tI t for fusingt = 16.7ms T j =25 C16A
I tI t for fusingt = 10 ms2A s
dl/dtCritical-rate of rise of commutation currentIG=2IGT tr100ns F=120Hz50A/us
TstgStorage Temperature-40150C
Electrical Characteristics
IDRM,IRRMRepetitive Peak Off-State Current / Repetitive Peak Reverse CurrentVDRM=VRRM T j =125 C0.8mA
VDRMRepetitive Peak Off-State Voltage800V
VGDGate non-trigger voltageVD= 1/2V DRM0.2V
VTMOn-state voltageIT=2A,tp=380us1.65V
IGTGate trigger currentT2(+), G(+)2mA
IGTGate trigger currentT2(+), G(-)2mA
IGTGate trigger currentT2(-), G(-)2mA
IGTGate trigger currentT2(-), G(+)2mA
VGTGate trigger voltageT2(+), G(+)VD=12V RL=1002.5V
VGTGate trigger voltageT2(+), G(-)VD=12V RL=1002.5V
VGTGate trigger voltageT2(-), G(-)VD=12V RL=1002.5V
VGTGate trigger voltageT2(-), G(+)VD=12V RL=1002.5V
IHHolding currentVD=12V,IGT=100mA30mA
dV/dtCritical-rate of rise of commutation voltageVDRM= 5 V/us20V/us
t gtTurn-on timeITM =16A ,VDM=V DRM VDM=67%V DRM(MA X)2us
(dl/dt)cCritical-rate of rise of commutation currentTj =125C5.4A/ms
dV/dtRate of change of commutating voltageTj =125C10V/us
dV/dtRate of change of commutating voltageTj =125C0.6V/us
dV/dtRate of change of commutating voltageTj =125C10V/us
Package Outline Dimensions
SymbolDimensions In MillimetersDimensions In Inches
A12.5000.098
A12.9000.114
b1.1000.043
b1.5000.059
b10.6600.026
b10.8600.034
c1.1700.046
c1.3700.054
D0.4500.018
D0.6000.024
E7.4000.291
E7.8000.307
e10.6000.417
e11.0000.433
e14.4800.176
e14.6800.184
h0.0000.000
h0.3000.012
L15.3000.602
L15.7000.618
L12.1000.083
L12.3000.091
P3.9000.154
P4.1000.161
3.0000.118
3.2000.126

2508201703_HXY-MOSFET-BT134-800E_C50313826.pdf

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Durable HXY MOSFET BT134-800E triac featuring glass passivated technology and 800 volt repetitive peak voltage rating

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Product Detail
Holding Current (Ih) :
30mA
Current - Gate Trigger(Igt) :
10mA
Voltage - On State(Vtm) :
1.65V
Average Gate Power Dissipation (PG(AV)) :
500mW
Current - On State(It(RMS)) :
4A
Peak off - state voltage(Vdrm) :
800V
Contact Supplier
Durable HXY MOSFET BT134-800E triac featuring glass passivated technology and 800 volt repetitive peak voltage rating

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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