| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.50mA | 1350 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 40.0A, Tvj = 25C | 1.65 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 40.0A, Tvj = 25C | 1.95 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 1.00mA, VCE = VGE | 5.1 - 6.4 | V |
| Zero gate voltage collector current | ICES | VCE = 1350V, VGE = 0V, Tvj = 25C | 850 | µA |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 40.0A | 30.0 | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 2360 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 70 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 60 | pF |
| Gate charge | QG | VCC = 1080V, IC = 40.0A, VGE = 15V | 305.0 | nC |
| Internal emitter inductance | LE | measured 5mm from case | 13.0 | nH |
| Turn-off delay time | td(off) | Tvj = 25C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 10.0Ω | 410 | ns |
| Fall time | tf | Tvj = 25C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 10.0Ω | 90 | ns |
| Turn-off energy | Eoff | Tvj = 25C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 10.0Ω | 2.00 | mJ |
| Turn-off energy, soft switching | Eoff | dv/dt = 200.0V/µs | 0.30 | mJ |
| Turn-off delay time | td(off) | Tvj = 175C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 10.0Ω | 480 | ns |
| Fall time | tf | Tvj = 175C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 10.0Ω | 220 | ns |
| Turn-off energy | Eoff | Tvj = 175C, VCC = 600V, IC = 40.0A, VGE = 0.0/15.0V, RG = 10.0Ω | 3.70 | mJ |
| Turn-off energy, soft switching | Eoff | dv/dt = 200.0V/µs | 0.85 | mJ |