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Jilin Sino Microelectronics JT015N065FED N channel IGBT transistor ideal for UPS power supply design
Jilin Sino Microelectronics JT015N065FED N channel IGBT transistor ideal for UPS power supply design
Specifications
Pd - Power Dissipation :
31W
Td(off) :
-
Td(on) :
-
Collector-Emitter Breakdown Voltage (Vces) :
650V
Input Capacitance(Cies) :
880pF@25V
IGBT Type :
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
6.5V@250uA
Gate Charge(Qg) :
-
Operating Temperature :
-55℃~+150℃@(Tj)
Reverse Recovery Time(trr) :
-
Switching Energy(Eoff) :
-
Turn-On Energy (Eon) :
-
Description :
31W 650V TO-220MF Single IGBTs RoHS
Mfr. Part # :
JT015N065FED
Model Number :
JT015N065FED
Package :
TO-220MF
Description

Product Overview

The JT015N065FED is an N-channel Insulated Gate Bipolar Transistor (IGBT) designed for general-purpose inverters and UPS power supplies. It features low gate charge, Trench FS Technology, and a typical saturation voltage of 1.6V at 15A and 25C. This RoHS-compliant product is available in a TO-220MF package.

Product Attributes

  • Brand: Jilin Sino-microelectronics Co., Ltd
  • Origin: China
  • Material: N-channel IGBT
  • Color: Not specified
  • Certifications: RoHS
  • Halogen Free: No

Technical Specifications

ParameterSymbolValueUnitConditions
MAIN CHARACTERISTICS
Collector Current (continuous)IC15AT=100
Collector Current (continuous)IC30AT=25
Collector-Emitter VoltageVCES650V-
Vcesat-typVCE(sat)1.6VVGE=15V, IC=15A, TC=25
ABSOLUTE MAXIMUM RATINGS
Collector-Emmiter VoltageVces650V(Tc=25)
Collector Current-continuousIC30A(T=25)
Collector Current-continuousIC15A(T=100)
Collector Current pulse (note 1)ICM45A-
Gate-Emmiter VoltageVGES20V-
Power DissipationPD31WTC=25
Operating and Storage Temperature RangeTJTSTG-55+150-
Maximum Lead Temperature for Soldering PurposesTL300-
ELECTRICAL CHARACTERISTICS
Collector-Emmiter VoltageBVCES650VIC=500A, VGE=0V
Breakdown Voltage Temperature CoefficientBVCES/TJ0.5V/IC=1mA, referenced to 25
Zero Gate Voltage Collector CurrentICES10AVCE=650V, VGE=0V, TC=25
Gate Threshold VoltageVGE(th)4.0 - 6.5VVCE = VGE , IC=250A
Collector-Emmiter saturation VoltageVCESAT1.6 - 2.0VVGE=15V IC=15A Tc=25
Input capacitanceCies880pFVCE=25V, VGE=0V, f=1.0MHZ
Thermal Resistance, Junction to CaseRth(j-c)4.8/W-
Thermal Resistance, Junction to AmbientRth(j-A)62.5/W-
Anti-Parallel Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward VoltageVF1.4 - 2.2VVGE=0V, IS=15A

2411201842_Jilin-Sino-Microelectronics-JT015N065FED_C2693274.pdf

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Jilin Sino Microelectronics JT015N065FED N channel IGBT transistor ideal for UPS power supply design

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Product Detail
Pd - Power Dissipation :
31W
Td(off) :
-
Td(on) :
-
Collector-Emitter Breakdown Voltage (Vces) :
650V
Input Capacitance(Cies) :
880pF@25V
IGBT Type :
-
Contact Supplier
Jilin Sino Microelectronics JT015N065FED N channel IGBT transistor ideal for UPS power supply design

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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