MachineU > China Products
High Ruggedness 650V 15A IGBT Module JIAENSEMI JNG15T65FJS1 Suitable for Inverter Applications
High Ruggedness 650V 15A IGBT Module JIAENSEMI JNG15T65FJS1 Suitable for Inverter Applications
Specifications
Pd - Power Dissipation :
39W
Td(off) :
104ns
Td(on) :
17ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
15pF
Input Capacitance(Cies) :
1.055nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
5.4V@1mA
Operating Temperature :
-40℃~+175℃
Pulsed Current- Forward(Ifm) :
60A
Output Capacitance(Coes) :
57pF
Reverse Recovery Time(trr) :
55ns
Switching Energy(Eoff) :
270uJ
Turn-On Energy (Eon) :
300uJ
Description :
39W 650V TO-220F Single IGBTs RoHS
Mfr. Part # :
JNG15T65FJS1
Model Number :
JNG15T65FJS1
Package :
TO-220F
Description

JNG15T65FJS1 IGBT Module

The JNG15T65FJS1 is a 650V, 15A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency motor control and general inverter applications. It offers high ruggedness performance with a 10s short circuit capability and excellent current sharing for parallel operation. Key features include a typical VCE(sat) of 1.6V at VGE=15V and IC=15A.

Product Attributes

  • Brand: JIAEN Semiconductor Co., Ltd
  • Product Code: JNG15T65FJS1
  • Package Type: TO-220F

Technical Specifications

Parameter Test Conditions Min. Typ. Max. Units
Absolute Maximum Ratings
Collector-Emitter Voltage (VCES) 650 V
Gate-Emitter Voltage (VGES) +20 V
Continuous Collector Current (IC) (TC=25) 30 A
Continuous Collector Current (IC) (TC=100) 15 A
Pulsed Collector Current (ICM) (Note 1) 60 A
Diode Continuous Forward Current (IF) (TC=100) 15 A
Diode Maximum Forward Current (IFM) (Note 1) 60 A
Short Circuit Withstand Time (tsc) 10 us
Maximum Power Dissipation (PD) (TC=25) 39 W
Maximum Power Dissipation (PD) (TC=100) 19 W
Operating Junction Temperature Range (TJ) -40 +175
Storage Temperature Range (TSTG) -55 +150
Thermal Characteristics
Thermal Resistance, Junction to case for IGBT (Rth j-c) 3.8 / W
Thermal Resistance, Junction to case for Diode (Rth j-c) 4.2 / W
Thermal Resistance, Junction to Ambient (Rth j-a) 50 / W
Electrical Characteristics (TC=25 unless otherwise noted)
Collector-Emitter Breakdown Voltage (BVCES) VGE= 0V, IC= 250uA 650 - - V
Collector-Emitter Leakage Current (ICES) VCE= 650V, VGE= 0V - - 50 uA
Gate Leakage Current, Forward (IGES) VGE=20V, VCE= 0V - - 100 nA
Gate Threshold Voltage (VGE(th)) VGE= VCE, IC=1mA 5.4 5.6 5.9 V
Collector-Emitter Saturation Voltage (VCE(sat)) VGE=15V, IC= 15A - 1.6 - V
Total Gate Charge (Qg) VCC=520V, VGE=15V, IC=15A - 55 - nC
Turn-on Delay Time (td(on)) VCC=400V, VGE=15V, IC=15A, RG=10, Inductive Load, TC=25 - 17 - ns
Turn-on Rise Time (tr) - 14 - ns
Turn-off Delay Time (td(off)) - 104 - ns
Turn-off Fall Time (tf) - 46 - ns
Turn-on Switching Loss (Eon) - 0.30 - mJ
Turn-off Switching Loss (Eoff) - 0.27 - mJ
Total Switching Loss (Ets) - 0.57 - mJ
Input Capacitance (Cies) VCE=30V, VGE=0V, f = 1MHz - 1055 - pF
Output Capacitance (Coes) - 57 - pF
Reverse Transfer Capacitance (Cres) - 15 - pF
Electrical Characteristics of Diode (TC=25 unless otherwise noted)
Diode Forward Voltage (VF) IF=15A - 1.4 - V
Diode Reverse Recovery Time (trr) VCE = 400V, IF = 15A, dif/dt = 600A/us - 55 - ns
Diode peak Reverse Recovery Current (Irr) - 9.5 - A
Diode Reverse Recovery Charge (Qrr) - 220 - nC

Note 1: Repetitive Rating: Pulse width limited by maximum junction temperature.


2509021810_JIAENSEMI-JNG15T65FJS1_C51484240.pdf

Send your message to this supplier
Send Now

High Ruggedness 650V 15A IGBT Module JIAENSEMI JNG15T65FJS1 Suitable for Inverter Applications

Ask Latest Price
Product Detail
Pd - Power Dissipation :
39W
Td(off) :
104ns
Td(on) :
17ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
15pF
Input Capacitance(Cies) :
1.055nF
Contact Supplier
High Ruggedness 650V 15A IGBT Module JIAENSEMI JNG15T65FJS1 Suitable for Inverter Applications

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Single IGBTs
MachineU China Products
Contact Supplier
Submit Requirement