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Silicon Power IGBT KIA Semicon Tech KGM40N120AI 40A 1200V TO247 Package Suitable for Industrial Applications
Silicon Power IGBT KIA Semicon Tech KGM40N120AI 40A 1200V TO247 Package Suitable for Industrial Applications
Silicon Power IGBT KIA Semicon Tech KGM40N120AI 40A 1200V TO247 Package Suitable for Industrial Applications
Silicon Power IGBT KIA Semicon Tech KGM40N120AI 40A 1200V TO247 Package Suitable for Industrial Applications
Silicon Power IGBT KIA Semicon Tech KGM40N120AI 40A 1200V TO247 Package Suitable for Industrial Applications
Silicon Power IGBT KIA Semicon Tech KGM40N120AI 40A 1200V TO247 Package Suitable for Industrial Applications
Specifications
Description :
TO-247 Single IGBTs RoHS
Mfr. Part # :
KGM40N120AI
Model Number :
KGM40N120AI
Package :
TO-247
Description

Product Overview

This is a 40A, 1200V Silicon Power IGBT from KIA SEMICONDUCTORS. It features low VCE(sat) of 1.91V (typ.), fast switching, high ruggedness, and short-circuit rating. Ideal for applications such as Solar Inverters, Uninterrupted Power Supply, Industrial Inductive Heating, and Energy Storage.

Product Attributes

  • Brand: KIA
  • Material: Silicon Power IGBT
  • Package: TO-247

Technical Specifications

Parameter Symbol Value Unit
Ordering Information
Part Number KGM40N120AI
Package TO-247
Brand KIA
Maximum Ratings
Collector-emitter voltage VCE 1200 V
DC collector current, TC=25C IC 80 A
DC collector current, TC=100C IC 40 A
Pulsed collector current ICpuls 160 A
Diode forward current, TC=25C IF 40 A
Diode forward current, TC=100C IF 40 A
Diode pulsed current IFpuls 80 A
Gate-emitter voltage VGE ±20 V
Transient Gate-emitter voltage VGE ±30 V
Power dissipation, TC=25C Ptot 575 W
Power dissipation, TC=100C Ptot 290 W
Operating junction temperature Tvj(0P) -40 to +175 C
Storage temperature Tstg -40 to +150 C
Soldering temperature 260 C
Thermal characteristics
IGBT Thermal Resistance, Junction-Case R(J-C) 0.26 C/W
Diode Thermal Resistance, Junction-Case R(J-C) 0.45 C/W
Electrical characteristics (TVj=25C, unless otherwise specified)
Collector-emitter breakdown voltage V(BR)CES 1200 V
Collector-emitter saturation voltage, VGE=15V, IC=60A, Tvj=25C VCEsat 1.91 V
Collector-emitter saturation voltage, VGE=15V, IC=60A, Tvj=150C VCEsat 2.36 V
Diode forward voltage, IF=60A, Tvj=25C VF 2.0 V
Diode forward voltage, IF=60A, Tvj=150C VF 1.74 V
Gate-emitter threshold voltage VGE(th) 5.1 V
Zero gate voltage collector current, VCE=650V, Tvj=25C ICES 250 uA
Gate-emitter leakage current, VGE=±20V IGES 600 nA
Transconductance, VCE=20V, IC=60A gfs 27 S
Dynamic Characteristic (TVj=25C, unless otherwise specified)
Input capacitance Cies 2500 pF
Output capacitance Coes 200 pF
Reverse transfer capacitance Cres 100 pF
Gate charge QG 120 nC
IGBT Characteristic, at Tvj=25C
Turn-on delay time td(on) 15 nS
Rise time tr 70 nS
Turn-off delay time td(off) 145 nS
Fall time tf 82 nS
Turn-on energy Eon 3.48 mJ
Turn-off energy Eoff 1.47 mJ
Diode Characteristic
Diode reverse recovery time trr 450 nS
Diode reverse recovery charge Qrr 2.57 μC
Diode peak reverse recovery current Irrm 13 A

2411121110_KIA-Semicon-Tech-KGM40N120AI_C41369542.pdf

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Silicon Power IGBT KIA Semicon Tech KGM40N120AI 40A 1200V TO247 Package Suitable for Industrial Applications

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Product Detail
Description :
TO-247 Single IGBTs RoHS
Mfr. Part # :
KGM40N120AI
Model Number :
KGM40N120AI
Package :
TO-247
Contact Supplier
Silicon Power IGBT KIA Semicon Tech KGM40N120AI 40A 1200V TO247 Package Suitable for Industrial Applications
Silicon Power IGBT KIA Semicon Tech KGM40N120AI 40A 1200V TO247 Package Suitable for Industrial Applications
Silicon Power IGBT KIA Semicon Tech KGM40N120AI 40A 1200V TO247 Package Suitable for Industrial Applications

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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