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High temperature IGBT HXY MOSFET GWA40MS120DF4AG-HXY with 40 amp collector current and RoHS compliance
High temperature IGBT HXY MOSFET GWA40MS120DF4AG-HXY with 40 amp collector current and RoHS compliance
Specifications
Pd - Power Dissipation :
441W
Td(off) :
262ns
Td(on) :
25ns
Collector-Emitter Breakdown Voltage (Vces) :
1.2kV
Reverse Transfer Capacitance (Cres) :
93pF
IGBT Type :
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
4.3V@1mA
Gate Charge(Qg) :
346nC@15V
Reverse Recovery Time(trr) :
94ns
Switching Energy(Eoff) :
2.3mJ
Turn-On Energy (Eon) :
1.3mJ
Input Capacitance(Cies) :
3.98nF
Pulsed Current- Forward(Ifm) :
160A
Output Capacitance(Coes) :
157pF
Description :
441W 1.2kV FS (Field Stop) TO-247 Single IGBTs RoHS
Mfr. Part # :
GWA40MS120DF4AG-HXY
Model Number :
GWA40MS120DF4AG-HXY
Package :
TO-247
Description

Product Overview

The GWA40MS120DF4AG is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is AEC-Q101 qualified and designed for high-temperature operation up to 175, making it suitable for demanding applications.

Product Attributes

  • Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
  • Origin: Shenzhen, China
  • Certifications: AEC-Q101 Qualified, RoHS Compliant, Halogen Free and Green Devices Available

Technical Specifications

ParameterValueUnitDescription
VCES1200VCollector-Emitter Voltage
IC40ACollector Current @TC=100C
VCE(sat).typ1.70VCollector-Emitter Saturation Voltage (Typical)
ICM160APulsed Collector Current, tp limited by TJmax
PD441WPower Dissipation @TC=25C
TJmax, Tstg-55 to 175Operating Junction and Storage Temperature Range
RJC (IGBT)0.34/WJunction-to-Case Thermal Resistance (IGBT)
RJA40/WJunction-to-Ambient Thermal Resistance
VGE(TH)4.3 - 6.3VGate Threshold Voltage
ICES10ACollector-Emitter Leakage Current @VCE=1200V, VGE=0V
Cies3980pFInput Capacitance @VGE=0V, VCE=25V, f=1.0MHz
Qg346nCGate Charge @VCC=960V, ICE=40A, VGE=15V
td(on)25nsTurn-on Delay Time @TJ=25
tf149nsFall Time @TJ=25
Eon1.30mJTurn-On Switching Loss @TJ=25
Eoff2.30mJTurn-Off Switching Loss @TJ=25
Trr94nsReverse Recovery Time @TJ=25
Qrr225nCReverse Recovery Charge @TJ=25
Package TypeTO-247
Device Per Unit30TubeQuantity

2509181738_HXY-MOSFET-GWA40MS120DF4AG-HXY_C49003426.pdf

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High temperature IGBT HXY MOSFET GWA40MS120DF4AG-HXY with 40 amp collector current and RoHS compliance

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Product Detail
Pd - Power Dissipation :
441W
Td(off) :
262ns
Td(on) :
25ns
Collector-Emitter Breakdown Voltage (Vces) :
1.2kV
Reverse Transfer Capacitance (Cres) :
93pF
IGBT Type :
FS (Field Stop)
Contact Supplier
High temperature IGBT HXY MOSFET GWA40MS120DF4AG-HXY with 40 amp collector current and RoHS compliance

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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