JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. The JNG20T65PS1 features 650V, 20A capability with a typical VCE(sat) of 2.0V at VGE=15V and IC=20A, providing high-speed switching and improved system efficiency with soft current turn-off waveforms and square RBSOA.
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| Collector-Emitter Voltage | VCES | 650 | V | |||
| Gate-Emitter Voltage | VGES | +30 | V | |||
| Continuous Collector Current (TC=25) | IC | 40 | A | |||
| Continuous Collector Current (TC=100) | IC | 20 | A | |||
| Pulsed Collector Current (Note 1) | ICM | 60 | A | |||
| Diode Continuous Forward Current (TC=100) | IF | 20 | A | |||
| Diode Maximum Forward Current (Note 1) | IFM | 60 | A | |||
| Short Circuit Withstand Time | tsc | 10 | us | |||
| Maximum Power Dissipation (TC=25) | PD | 125 | W | |||
| Maximum Power Dissipation (TC=100) | PD | 50 | W | |||
| Operating Junction Temperature Range | TJ | -55 | +150 | |||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to case for IGBT | Rth j-c | 1.0 | / W | |||
| Thermal Resistance, Junction to case for Diode | Rth j-c | 1.6 | / W | |||
| Thermal Resistance, Junction to Ambient | Rth j-a | 62 | / W | |||
| Electrical Characteristics (TC=25 unless otherwise noted) | ||||||
| Collector-Emitter Breakdown Voltage | BVCES | VGE= 0V, IC= 250uA | 650 | - | - | V |
| Collector-Emitter Leakage Current | ICES | VCE= 650V, VGE= 0V | - | - | 100 | uA |
| Gate Leakage Current, Forward | IGES | VGE=20V, VCE= 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGE(th) | VGE= VCE, IC= 250uA | 5.1 | - | 6.9 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC= 20A | - | 2.0 | 2.5 | V |
| Total Gate Charge | Qg | VCC=480V VGE=15V IC=20A | - | 271 | - | nC |
| Gate-Emitter Charge | Qge | - | 70 | - | nC | |
| Gate-Collector Charge | Qgc | - | 131 | - | nC | |
| Turn-on Delay Time | td(on) | VCC=400V VGE=15V IC=20A RG=15 Inductive Load TC=25 | - | 17 | - | ns |
| Turn-on Rise Time | tr | - | 31 | - | ns | |
| Turn-off Delay Time | td(off) | - | 71 | - | ns | |
| Turn-off Fall Time | tf | - | 99 | - | ns | |
| Turn-on Switching Loss | Eon | - | 0.46 | - | mJ | |
| Turn-off Switching Loss | Eoff | - | 0.41 | - | mJ | |
| Total Switching Loss | Ets | - | 0.87 | - | mJ | |
| Input Capacitance | Cies | VCE=25V VGE=0V f = 1MHz | - | 831 | - | pF |
| Output Capacitance | Coes | - | 50 | - | pF | |
| Reverse Transfer Capacitance | Cres | - | 7.5 | - | pF | |
| Electrical Characteristics of Diode (TC=25 unless otherwise noted) | ||||||
| Diode Forward Voltage | VF | IF=20A | - | 1.5 | 3.0 | V |
| Diode Reverse Recovery Time | trr | VCE = 400V IF= 20A Rg=15 | - | 110 | - | ns |
| Diode peak Reverse Recovery Current | IRR | - | 16.6 | - | A | |
| Diode Reverse Recovery Charge | Qrr | - | 736 | - | nC | |