Specifications
Td(off) :
71ns
Pd - Power Dissipation :
125W
Td(on) :
17ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
7.5pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
5.1V@250uA
Gate Charge(Qg) :
271nC
Operating Temperature :
-55℃~+150℃
Reverse Recovery Time(trr) :
110ns
Switching Energy(Eoff) :
410uJ
Turn-On Energy (Eon) :
460uJ
Input Capacitance(Cies) :
831pF
Pulsed Current- Forward(Ifm) :
60A
Output Capacitance(Coes) :
50pF
Description :
125W 650V TO-220 Single IGBTs RoHS
Mfr. Part # :
JNG20T65PS1
Model Number :
JNG20T65PS1
Package :
TO-220
Description

JNG20T65PS1 IGBT

JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. The JNG20T65PS1 features 650V, 20A capability with a typical VCE(sat) of 2.0V at VGE=15V and IC=20A, providing high-speed switching and improved system efficiency with soft current turn-off waveforms and square RBSOA.

Product Attributes

  • Brand: JIAEN Semiconductor
  • Product Series: Trench IGBTs

Technical Specifications

Parameter Symbol Test Conditions Min. Typ. Max. Units
Absolute Maximum Ratings
Collector-Emitter Voltage VCES 650 V
Gate-Emitter Voltage VGES +30 V
Continuous Collector Current (TC=25) IC 40 A
Continuous Collector Current (TC=100) IC 20 A
Pulsed Collector Current (Note 1) ICM 60 A
Diode Continuous Forward Current (TC=100) IF 20 A
Diode Maximum Forward Current (Note 1) IFM 60 A
Short Circuit Withstand Time tsc 10 us
Maximum Power Dissipation (TC=25) PD 125 W
Maximum Power Dissipation (TC=100) PD 50 W
Operating Junction Temperature Range TJ -55 +150
Storage Temperature Range TSTG -55 +150
Thermal Characteristics
Thermal Resistance, Junction to case for IGBT Rth j-c 1.0 / W
Thermal Resistance, Junction to case for Diode Rth j-c 1.6 / W
Thermal Resistance, Junction to Ambient Rth j-a 62 / W
Electrical Characteristics (TC=25 unless otherwise noted)
Collector-Emitter Breakdown Voltage BVCES VGE= 0V, IC= 250uA 650 - - V
Collector-Emitter Leakage Current ICES VCE= 650V, VGE= 0V - - 100 uA
Gate Leakage Current, Forward IGES VGE=20V, VCE= 0V - - 100 nA
Gate Threshold Voltage VGE(th) VGE= VCE, IC= 250uA 5.1 - 6.9 V
Collector-Emitter Saturation Voltage VCE(sat) VGE=15V, IC= 20A - 2.0 2.5 V
Total Gate Charge Qg VCC=480V VGE=15V IC=20A - 271 - nC
Gate-Emitter Charge Qge - 70 - nC
Gate-Collector Charge Qgc - 131 - nC
Turn-on Delay Time td(on) VCC=400V VGE=15V IC=20A RG=15 Inductive Load TC=25 - 17 - ns
Turn-on Rise Time tr - 31 - ns
Turn-off Delay Time td(off) - 71 - ns
Turn-off Fall Time tf - 99 - ns
Turn-on Switching Loss Eon - 0.46 - mJ
Turn-off Switching Loss Eoff - 0.41 - mJ
Total Switching Loss Ets - 0.87 - mJ
Input Capacitance Cies VCE=25V VGE=0V f = 1MHz - 831 - pF
Output Capacitance Coes - 50 - pF
Reverse Transfer Capacitance Cres - 7.5 - pF
Electrical Characteristics of Diode (TC=25 unless otherwise noted)
Diode Forward Voltage VF IF=20A - 1.5 3.0 V
Diode Reverse Recovery Time trr VCE = 400V IF= 20A Rg=15 - 110 - ns
Diode peak Reverse Recovery Current IRR - 16.6 - A
Diode Reverse Recovery Charge Qrr - 736 - nC

2509021810_JIAENSEMI-JNG20T65PS1_C51484249.pdf

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Trench IGBT JIAENSEMI JNG20T65PS1 offering 650 volt 20 amp capability for soft switching and inverter

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Td(off) :
71ns
Pd - Power Dissipation :
125W
Td(on) :
17ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
7.5pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
5.1V@250uA
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Trench IGBT JIAENSEMI JNG20T65PS1 offering 650 volt 20 amp capability for soft switching and inverter

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier
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