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IGBT transistor JIAENSEMI JNG20T65FS1 650V 20A TO220F package suitable for motor control applications
IGBT transistor JIAENSEMI JNG20T65FS1 650V 20A TO220F package suitable for motor control applications
Specifications
Pd - Power Dissipation :
40W
Td(off) :
71ns
Td(on) :
17ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
7.5pF
Input Capacitance(Cies) :
831pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
5.1V@250uA
Operating Temperature :
-55℃~+150℃
Pulsed Current- Forward(Ifm) :
60A
Output Capacitance(Coes) :
50pF
Reverse Recovery Time(trr) :
110ns
Switching Energy(Eoff) :
410uJ
Turn-On Energy (Eon) :
460uJ
Description :
40W 650V TO-220F Single IGBTs RoHS
Mfr. Part # :
JNG20T65FS1
Model Number :
JNG20T65FS1
Package :
TO-220F
Description

JNG20T65FS1 IGBT

The JIAEN Trench IGBTs offer lower losses and higher energy efficiency, making them ideal for applications such as motor control, general inverters, and other soft switching applications. Key features include a 650V, 20A rating, low VCE(sat) of 2.0V (typ.), high-speed switching, and soft current turn-off waveforms.

Product Attributes

  • Brand: JIAEN
  • Product Series: Trench IGBTs
  • Package Type: TO-220F

Technical Specifications

Parameter Symbol Test Conditions Min. Typ. Max. Units
Absolute Maximum Ratings
Collector-Emitter Voltage VCES 650 V
Gate-Emitter Voltage VGES ±30 V
Continuous Collector Current (TC=25) IC 40 A
Continuous Collector Current (TC=100) IC 20 A
Pulsed Collector Current (Note 1) ICM 60 A
Diode Continuous Forward Current (TC=100) IF 20 A
Diode Maximum Forward Current (Note 1) IFM 60 A
Short Circuit Withstand Time tsc 10 µs
Maximum Power Dissipation (TC=25) PD 40 W
Maximum Power Dissipation (TC=100) PD 16 W
Operating Junction Temperature Range TJ -55 +150
Storage Temperature Range TSTG -55 +150
Thermal Characteristics
Thermal Resistance, Junction to case for IGBT Rth j-c 3.125 / W
Thermal Resistance, Junction to case for Diode Rth j-c 3.8 / W
Thermal Resistance, Junction to Ambient Rth j-a 62.5 / W
Electrical Characteristics (TC=25 unless otherwise noted)
Collector-Emitter Breakdown Voltage BVCES VGE= 0V, IC= 250uA 650 - - V
Collector-Emitter Leakage Current ICES VCE= 650V, VGE= 0V - - 100 µA
Gate Leakage Current, Forward IGES VGE=±20V, VCE= 0V - - ±100 nA
Gate Threshold Voltage VGE(th) VGE= VCE, IC= 250uA 5.1 - 6.9 V
Collector-Emitter Saturation Voltage VCE(sat) VGE=15V, IC= 20A - 2.0 2.5 V
Total Gate Charge Qg VCC=480V VGE=15V IC=20A - 271 - nC
Gate-Emitter Charge Qge - 70 - nC
Gate-Collector Charge Qgc - 131 - nC
Turn-on Delay Time td(on) VCC=400V VGE=15V IC=20A RG=15Ω Inductive Load TC=25 ˆC - 17 - ns
Turn-on Rise Time tr - 31 - ns
Turn-off Delay Time td(off) - 71 - ns
Turn-off Fall Time tf - 99 - ns
Turn-on Switching Loss Eon - 0.46 - mJ
Turn-off Switching Loss Eoff - 0.41 - mJ
Total Switching Loss Ets - 0.87 - mJ
Input Capacitance Cies VCE=25V VGE=0V f = 1MHz - 831 - pF
Output Capacitance Coes - 50 - pF
Reverse Transfer Capacitance Cres - 7.5 - pF
Electrical Characteristics of Diode (TC=25 unless otherwise noted)
Diode Forward Voltage VF IF=20A - 1.5 3.0 V
Diode Reverse Recovery Time trr VCE = 400V IF= 20ARg=15Ω - 110 - ns
Diode peak Reverse Recovery Current IRR - 16.6 - A
Diode Reverse Recovery Charge Qrr - 736 - nC

2509021810_JIAENSEMI-JNG20T65FS1_C51484246.pdf

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IGBT transistor JIAENSEMI JNG20T65FS1 650V 20A TO220F package suitable for motor control applications

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Product Detail
Pd - Power Dissipation :
40W
Td(off) :
71ns
Td(on) :
17ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
7.5pF
Input Capacitance(Cies) :
831pF
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IGBT transistor JIAENSEMI JNG20T65FS1 650V 20A TO220F package suitable for motor control applications

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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